Confined ion beam sputtering device and method

Title: Confined ion beam sputtering device and method

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Abstract

A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

Inventors:

Sharp, Donald J. ^[1]

(Albuquerque, NM)

Issue Date:: 1988-01-01

Research Org.:: AT & T CORP

OSTI Identifier:: 866602

Patent Number(s):: 4747922

Assignee:: United States of America as represented by United States (Washington, DC) SNL

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: confined; beam; sputtering; device; method; hollow; cylindrical; target; lined; internally; sputter; deposit; material; surrounds; substrate; sputtered; deposition; obtained; received; forced; negative; bias; applied; diverge; impinge; acute; angles; surface; impingement; results; radially; inward; downstream; directed; flux; particles; positive; enhances; divergence; approaching; beams; generate; rate; alternatively; induces; core; portion; reach; provide; polishing; thereon; bias applied; acute angle; deposit material; hollow cylindrical; radially inward; target surface; beam sputtering; acute angles; negative bias; flux rate; sputter deposit; deposit particles; /204/

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                    Sharp, Donald J. Confined ion beam sputtering device and method.  United States: N. p., 1988. 
        Web.

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                    Sharp, Donald J. Confined ion beam sputtering device and method.  United States.

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                    Sharp, Donald J. Fri .  
        "Confined ion beam sputtering device and method".  United States.  https://www.osti.gov/servlets/purl/866602.

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@article{osti_866602,

  title        = {Confined ion beam sputtering device and method},

  author       = {Sharp, Donald J.},

  abstractNote = {A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {1}

}

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