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Title: Confined ion beam sputtering device and method

Abstract

A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

Inventors:
 [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
866602
Patent Number(s):
4747922
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
confined; beam; sputtering; device; method; hollow; cylindrical; target; lined; internally; sputter; deposit; material; surrounds; substrate; sputtered; deposition; obtained; received; forced; negative; bias; applied; diverge; impinge; acute; angles; surface; impingement; results; radially; inward; downstream; directed; flux; particles; positive; enhances; divergence; approaching; beams; generate; rate; alternatively; induces; core; portion; reach; provide; polishing; thereon; bias applied; acute angle; deposit material; hollow cylindrical; radially inward; target surface; beam sputtering; acute angles; negative bias; flux rate; sputter deposit; deposit particles; /204/

Citation Formats

Sharp, Donald J. Confined ion beam sputtering device and method. United States: N. p., 1988. Web.
Sharp, Donald J. Confined ion beam sputtering device and method. United States.
Sharp, Donald J. Fri . "Confined ion beam sputtering device and method". United States. https://www.osti.gov/servlets/purl/866602.
@article{osti_866602,
title = {Confined ion beam sputtering device and method},
author = {Sharp, Donald J.},
abstractNote = {A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

Patent:

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