Semiconductor junction formation by directed heat

Campbell, Robert B

Title: Semiconductor junction formation by directed heat

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Abstract

The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

Inventors:

Campbell, Robert B ^[1]

Pittsburgh, PA

Issue Date:: 1988-03-24

OSTI Identifier:: 866522

Patent Number(s):: 4729962

Application Number:: 06/843,486

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/2254 - {from or through or into an applied layer, e.g. photoresist, nitrides}
H01L21/268 - using electromagnetic radiation, e.g. laser radiation

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/014 - Capacitor
Y10S148/093 - Laser beam treatment in general

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DOE Contract Number:: 956616MOD1

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: semiconductor; junction; formation; directed; heat; process; applying; precursors; n-; p-type; dopants; therein; silicon; web; baked; oven; 10; drive; excessive; solvents; heated; pulsed; intensity; light; mechanism; 12; 1100; degree; -1150; simultaneously; form; junctions; p-type dopant; p-type dopants; type dopant; semiconductor junction; intensity light; silicon web; type dopants; simultaneously form; junction formation; /438/136/148/

Citation Formats


                    Campbell, Robert B. Semiconductor junction formation by directed heat.  United States: N. p., 1988. 
        Web.

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                    Campbell, Robert B. Semiconductor junction formation by directed heat.  United States.

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                    Campbell, Robert B. Thu .  
        "Semiconductor junction formation by directed heat".  United States.  https://www.osti.gov/servlets/purl/866522.

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@article{osti_866522,

  title        = {Semiconductor junction formation by directed heat},

  author       = {Campbell, Robert B},

  abstractNote = {The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {3}

}

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