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Title: Semiconductor junction formation by directed heat

Abstract

The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

Inventors:
 [1]
  1. (Pittsburgh, PA)
Issue Date:
OSTI Identifier:
866522
Patent Number(s):
4729962
Application Number:
06/843,486
Assignee:
United States of America as represented by United States (Washington, DC) OSTI
DOE Contract Number:  
956616MOD1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; junction; formation; directed; heat; process; applying; precursors; n-; p-type; dopants; therein; silicon; web; baked; oven; 10; drive; excessive; solvents; heated; pulsed; intensity; light; mechanism; 12; 1100; degree; -1150; simultaneously; form; junctions; p-type dopant; p-type dopants; type dopant; semiconductor junction; intensity light; silicon web; type dopants; simultaneously form; junction formation; /438/136/148/

Citation Formats

Campbell, Robert B. Semiconductor junction formation by directed heat. United States: N. p., 1988. Web.
Campbell, Robert B. Semiconductor junction formation by directed heat. United States.
Campbell, Robert B. Thu . "Semiconductor junction formation by directed heat". United States. https://www.osti.gov/servlets/purl/866522.
@article{osti_866522,
title = {Semiconductor junction formation by directed heat},
author = {Campbell, Robert B.},
abstractNote = {The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {3}
}

Patent:

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