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Title: Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same

Abstract

New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

Inventors:
 [1]
  1. (Evergreen, CO)
Issue Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
866481
Patent Number(s):
4721539
Assignee:
United States of America as represented by United States (Washington, DC) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
single; crystal; quaternary; alloys; ib-iiia-se; methods; synthesizing; cu; 1-x; inse; ranges; preferably; value; 75; cuin; 1-y; 90; form; crystals; enhanced; structure; perfection; substantially; free; fissures; disclosed; processes; preparing; process; placing; stoichiometric; quantities; reaction; mixture; refractory; crucible; manner; surrounded; loaded; chamber; pressure; atmosphere; inert; gas; confine; volatile; heating; melting; melt; cooled; slowly; direct; solidification; ternary alloy; stoichiometric quantities; substantially free; inert gas; reaction mixture; single crystal; single crystals; pressure atmosphere; quaternary alloys; ternary alloys; quaternary alloy; /148/420/

Citation Formats

Ciszek, Theodore F. Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same. United States: N. p., 1988. Web.
Ciszek, Theodore F. Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same. United States.
Ciszek, Theodore F. Fri . "Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same". United States. https://www.osti.gov/servlets/purl/866481.
@article{osti_866481,
title = {Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same},
author = {Ciszek, Theodore F.},
abstractNote = {New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

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