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Title: Tailorable infrared sensing device with strain layer superlattice structure

Abstract

An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

Inventors:
 [1]
  1. (LaCrescenta, CA)
Issue Date:
OSTI Identifier:
866442
Patent Number(s):
4711857
Application Number:
06/901,114
Assignee:
United States of America as represented by Administrator of (Washington, DC) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
tailorable; infrared; sensing; device; strain; layer; superlattice; structure; photodetector; formed; heavily; doped; p-type; 1-x; pre-established; manufacture; range; 100; percent; custom; tailored; differentiate; close; wavelengths; 50; microns; fabricated; appropriate; selection; alloy; constituency; value; establish; specific; wavelength; photodetection; cut-off; occur; doped p-type; appropriate selection; heavily doped; sensing device; lattice structure; specific wavelength; superlattice structure; layer superlattice; /438/257/

Citation Formats

Cheng, Li-Jen. Tailorable infrared sensing device with strain layer superlattice structure. United States: N. p., 1987. Web.
Cheng, Li-Jen. Tailorable infrared sensing device with strain layer superlattice structure. United States.
Cheng, Li-Jen. Tue . "Tailorable infrared sensing device with strain layer superlattice structure". United States. https://www.osti.gov/servlets/purl/866442.
@article{osti_866442,
title = {Tailorable infrared sensing device with strain layer superlattice structure},
author = {Cheng, Li-Jen},
abstractNote = {An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {12}
}

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