Tailorable infrared sensing device with strain layer superlattice structure

Title: Tailorable infrared sensing device with strain layer superlattice structure

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Abstract

An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

Inventors:

Cheng, Li-Jen ^[1]

LaCrescenta, CA

Issue Date:: 1987-12-08

OSTI Identifier:: 866442

Patent Number(s):: 4711857

Application Number:: 06/901,114

Assignee:: United States of America as represented by Administrator of (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/035254 - {including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/101 - Devices sensitive to infra-red, visible or ultra-violet radiation

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Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: tailorable; infrared; sensing; device; strain; layer; superlattice; structure; photodetector; formed; heavily; doped; p-type; 1-x; pre-established; manufacture; range; 100; percent; custom; tailored; differentiate; close; wavelengths; 50; microns; fabricated; appropriate; selection; alloy; constituency; value; establish; specific; wavelength; photodetection; cut-off; occur; doped p-type; appropriate selection; heavily doped; sensing device; lattice structure; specific wavelength; superlattice structure; layer superlattice; /438/257/

Citation Formats


                    Cheng, Li-Jen. Tailorable infrared sensing device with strain layer superlattice structure.  United States: N. p., 1987. 
        Web.

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                    Cheng, Li-Jen. Tailorable infrared sensing device with strain layer superlattice structure.  United States.

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                    Cheng, Li-Jen. Tue .  
        "Tailorable infrared sensing device with strain layer superlattice structure".  United States.  https://www.osti.gov/servlets/purl/866442.

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@article{osti_866442,

  title        = {Tailorable infrared sensing device with strain layer superlattice structure},

  author       = {Cheng, Li-Jen},

  abstractNote = {An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1987},

  month        = {12}

}

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