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Title: Process for growing silicon carbide whiskers by undercooling

Abstract

A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

Inventors:
 [1]
  1. Los Alamos, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
OSTI Identifier:
866400
Patent Number(s):
4702901
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; growing; silicon; carbide; whiskers; undercooling; method; especially; beta; form; heating; schedule; temperature; atmosphere; growth; zone; furnace; heated; cooled; below; induce; nucleation; catalyst; sites; desired; time; results; selection; silicon carbide; carbide whiskers; growth temperature; growth zone; carbide whisker; growing silicon; /423/

Citation Formats

Shalek, Peter D. Process for growing silicon carbide whiskers by undercooling. United States: N. p., 1987. Web.
Shalek, Peter D. Process for growing silicon carbide whiskers by undercooling. United States.
Shalek, Peter D. Thu . "Process for growing silicon carbide whiskers by undercooling". United States. https://www.osti.gov/servlets/purl/866400.
@article{osti_866400,
title = {Process for growing silicon carbide whiskers by undercooling},
author = {Shalek, Peter D},
abstractNote = {A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

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