skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chemoresistive gas sensor

Abstract

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Inventors:
 [1]
  1. Livermore, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
866284
Patent Number(s):
4674320
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
chemoresistive; gas; sensor; provided; improved; sensitivity; layer; organic; semiconductor; disposed; electrodes; connected; voltage; source; conductivity; material; dispersed; form; particles; islands; average; interisland; spacing; selected; predominant; mode; current; flow; electron; funneling; adsorption; gaseous; contaminant; modulates; tunneling; quantitative; manner; improved sensitivity; voltage source; current flow; gas sensor; tunneling current; organic semiconductor; chemoresistive gas; conductivity material; gaseous contaminant; /73/338/427/

Citation Formats

Hirschfeld, Tomas B. Chemoresistive gas sensor. United States: N. p., 1987. Web.
Hirschfeld, Tomas B. Chemoresistive gas sensor. United States.
Hirschfeld, Tomas B. Thu . "Chemoresistive gas sensor". United States. https://www.osti.gov/servlets/purl/866284.
@article{osti_866284,
title = {Chemoresistive gas sensor},
author = {Hirschfeld, Tomas B},
abstractNote = {A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

Save / Share: