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Title: Deposition method for producing silicon carbide high-temperature semiconductors

Abstract

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Inventors:
 [1];  [2]
  1. (La Crescenta, CA)
  2. (W. Corine, CA)
Issue Date:
OSTI Identifier:
866250
Patent Number(s):
4664944
Assignee:
United States of America as represented by United States (Washington, DC) OSTI
DOE Contract Number:  
NAS7918
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
deposition; method; producing; silicon; carbide; high-temperature; semiconductors; improved; semiconductor; material; comprising; placing; substrate; composed; fluidized; bed; reactor; fluidizing; particles; hydrogen; gas; mildly; bubbling; mode; distributor; heating; temperatures; 1200; degree; -1500; depositing; layer; bed particles; deposition method; semiconductor substrate; material comprising; hydrogen gas; fluidized bed; semiconductor material; silicon carbide; producing silicon; comprising placing; gas distributor; temperature semiconductor; substrate composed; temperature semiconductors; carbide high-temperature; /117/148/427/

Citation Formats

Hsu, George C., and Rohatgi, Naresh K. Deposition method for producing silicon carbide high-temperature semiconductors. United States: N. p., 1987. Web.
Hsu, George C., & Rohatgi, Naresh K. Deposition method for producing silicon carbide high-temperature semiconductors. United States.
Hsu, George C., and Rohatgi, Naresh K. Thu . "Deposition method for producing silicon carbide high-temperature semiconductors". United States. https://www.osti.gov/servlets/purl/866250.
@article{osti_866250,
title = {Deposition method for producing silicon carbide high-temperature semiconductors},
author = {Hsu, George C. and Rohatgi, Naresh K.},
abstractNote = {An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

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