Deposition method for producing silicon carbide high-temperature semiconductors
Abstract
An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.
- Inventors:
-
- La Crescenta, CA
- W. Corine, CA
- Issue Date:
- OSTI Identifier:
- 866250
- Patent Number(s):
- 4664944
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- NAS7918
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- deposition; method; producing; silicon; carbide; high-temperature; semiconductors; improved; semiconductor; material; comprising; placing; substrate; composed; fluidized; bed; reactor; fluidizing; particles; hydrogen; gas; mildly; bubbling; mode; distributor; heating; temperatures; 1200; degree; -1500; depositing; layer; bed particles; deposition method; semiconductor substrate; material comprising; hydrogen gas; fluidized bed; semiconductor material; silicon carbide; producing silicon; comprising placing; gas distributor; temperature semiconductor; substrate composed; temperature semiconductors; carbide high-temperature; /117/148/427/
Citation Formats
Hsu, George C, and Rohatgi, Naresh K. Deposition method for producing silicon carbide high-temperature semiconductors. United States: N. p., 1987.
Web.
Hsu, George C, & Rohatgi, Naresh K. Deposition method for producing silicon carbide high-temperature semiconductors. United States.
Hsu, George C, and Rohatgi, Naresh K. Thu .
"Deposition method for producing silicon carbide high-temperature semiconductors". United States. https://www.osti.gov/servlets/purl/866250.
@article{osti_866250,
title = {Deposition method for producing silicon carbide high-temperature semiconductors},
author = {Hsu, George C and Rohatgi, Naresh K},
abstractNote = {An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1987},
month = {Thu Jan 01 00:00:00 EST 1987}
}
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