Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals
Abstract
A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.
- Inventors:
-
- Evergreen, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 866189
- Patent Number(s):
- 4652332
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; synthesizing; growing; copper-indium-diselenide; cuinse; crystals; process; preparing; melting; sufficient; quantity; stoichiometric; quantities; cu; crucible; pressure; atmosphere; inert; gas; encapsulate; melt; confine; additional; range; percent; preferred; amounts; lost; crystal; grown; inserting; seed; contact; withdrawing; upwardly; grow; thereon; seed crystal; stoichiometric quantities; inert gas; sufficient quantity; pressure atmosphere; stoichiometric quantity; /117/136/
Citation Formats
Ciszek, Theodore F. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals. United States: N. p., 1987.
Web.
Ciszek, Theodore F. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals. United States.
Ciszek, Theodore F. Thu .
"Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals". United States. https://www.osti.gov/servlets/purl/866189.
@article{osti_866189,
title = {Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals},
author = {Ciszek, Theodore F},
abstractNote = {A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}
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