Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals
Abstract
Apparatus for continuously forming a silicon crystal sheet from a silicon rod in a noncrucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed that can be used for microcircuitry chips or solar cells.
- Inventors:
-
- Evergreen, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 866181
- Patent Number(s):
- 4650541
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- apparatus; method; horizontal; crucible-free; growth; silicon; sheet; crystals; continuously; forming; crystal; rod; noncrucible; environment; rotated; fed; rf; coil; inert; atmosphere; upper; molten; pulled; therefrom; substantially; horizontally; continuous; strip; shorting; provided; limit; heating; argon; gas; create; suitable; closed; chamber; defect-free; formed; microcircuitry; chips; solar; cells; rf coil; substantially horizontal; silicon crystal; closed chamber; continuous strip; solar cell; solar cells; inert atmosphere; silicon sheet; free silicon; substantially defect; /117/136/
Citation Formats
Ciszek, Theodore F. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals. United States: N. p., 1987.
Web.
Ciszek, Theodore F. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals. United States.
Ciszek, Theodore F. Thu .
"Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals". United States. https://www.osti.gov/servlets/purl/866181.
@article{osti_866181,
title = {Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals},
author = {Ciszek, Theodore F},
abstractNote = {Apparatus for continuously forming a silicon crystal sheet from a silicon rod in a noncrucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed that can be used for microcircuitry chips or solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.