Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
Abstract
A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.
- Inventors:
-
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 866179
- Patent Number(s):
- 4649859
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- reactor; design; uniform; chemical; vapor; deposition-grown; films; substrate; rotation; quartz; vessel; growth; semiconductor; vertical; cylindrical; reaction; chamber; substrate-supporting; pedestal; provides; horizontal; surface; spaced; perimeter; wall; confinement; diameter; disposed; coaxially; receives; gas; injected; tangent; inside; forming; helical; stream; descends; edge; separation; flow; diverting; inwardly; spiraling; vortex; reactor design; semiconductor film; confinement chamber; supporting surface; reaction gas; chemical vapor; reaction chamber; reactor vessel; gas stream; vapor deposition; chamber wall; semiconductor films; surface spaced; disposed coaxially; horizontal surface; gas injected; uniform semiconductor; uniform chemical; pedestal provide; quartz reactor; /118/
Citation Formats
Wanlass, Mark. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States: N. p., 1987.
Web.
Wanlass, Mark. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States.
Wanlass, Mark. Thu .
"Reactor design for uniform chemical vapor deposition-grown films without substrate rotation". United States. https://www.osti.gov/servlets/purl/866179.
@article{osti_866179,
title = {Reactor design for uniform chemical vapor deposition-grown films without substrate rotation},
author = {Wanlass, Mark},
abstractNote = {A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}
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