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Title: Composition/bandgap selective dry photochemical etching of semiconductor materials

Abstract

A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Inventors:
 [1];  [2]
  1. Edgewood, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
866167
Patent Number(s):
4648938
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
composition; bandgap; selective; dry; photochemical; etching; semiconductor; materials; method; selectively; photochemically; material; direct; presence; substantially; etched; comprises; subjecting; photon; flux; gaseous; etchant; conditions; ineffective; chemical; photons; energy; whereby; dry etching; chemical etching; semiconductor materials; semiconductor material; photon flux; photochemical etching; selectively photochemically; comprises subjecting; material substantially; selective dry; chemically etched; direct bandgap; photochemically dry; dry photochemical; /438/

Citation Formats

Ashby, Carol I. H., and Dishman, James L. Composition/bandgap selective dry photochemical etching of semiconductor materials. United States: N. p., 1987. Web.
Ashby, Carol I. H., & Dishman, James L. Composition/bandgap selective dry photochemical etching of semiconductor materials. United States.
Ashby, Carol I. H., and Dishman, James L. Thu . "Composition/bandgap selective dry photochemical etching of semiconductor materials". United States. https://www.osti.gov/servlets/purl/866167.
@article{osti_866167,
title = {Composition/bandgap selective dry photochemical etching of semiconductor materials},
author = {Ashby, Carol I. H. and Dishman, James L},
abstractNote = {A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

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