Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

Title: Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

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Abstract

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Inventors:

Ashby, Carol I. H. ^[1]; Dishman, James L ^[2]

Edgewood, NM
Albuquerque, NM

Issue Date:: 1987-01-01

Research Org.:: AT&T

OSTI Identifier:: 866166

Patent Number(s):: 4648936

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/30621 - {Vapour phase etching}

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DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: dopant; type; concentration; selective; dry; photochemical; etching; semiconductor; materials; method; selectively; photochemically; material; composition; presence; substantially; etched; comprises; subjecting; photon; flux; energy; respective; direct; bandgaps; gaseous; chemical; etchant; conditions; ineffective; photons; resultant; electronic; structure; sufficient; undergo; substantial; preferred; mode; subjected; bias; voltage; suppresses; n-; p-; n-type; respectively; heavily; doped; p-type; n-type material; dry etching; heavily doped; chemical etching; semiconductor materials; semiconductor material; bias voltage; photon flux; photochemical etching; selectively photochemically; preferred mode; comprises subjecting; material substantially; selective dry; p-type material; p- type; direct bandgap; type materials; type material; photochemically dry; dry photochemical; /438/

Citation Formats


                    Ashby, Carol I. H., and Dishman, James L. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials.  United States: N. p., 1987. 
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                    Ashby, Carol I. H., & Dishman, James L. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials.  United States.

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                    Ashby, Carol I. H., and Dishman, James L. Thu .  
        "Dopant type and/or concentration selective dry photochemical etching of semiconductor materials".  United States.  https://www.osti.gov/servlets/purl/866166.

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@article{osti_866166,

  title        = {Dopant type and/or concentration selective dry photochemical etching of semiconductor materials},

  author       = {Ashby, Carol I. H. and Dishman, James L},

  abstractNote = {A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1987},

  month        = {1}

}

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