skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Process for producing chalcogenide semiconductors

Abstract

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Inventors:
 [1];  [2]
  1. Westminster, CO
  2. Omaha, NE
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
866137
Patent Number(s):
4642140
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; producing; chalcogenide; semiconductors; semiconductor; material; disclosed; forming; base; metal; layer; contacting; solution; ph; containing; chalcogen; chalcogenize; form; metal layer; semiconductor material; base metal; chalcogenide semiconductor; producing chalcogenide; /438/136/148/427/

Citation Formats

Noufi, Rommel, and Chen, Yih-Wen. Process for producing chalcogenide semiconductors. United States: N. p., 1987. Web.
Noufi, Rommel, & Chen, Yih-Wen. Process for producing chalcogenide semiconductors. United States.
Noufi, Rommel, and Chen, Yih-Wen. Thu . "Process for producing chalcogenide semiconductors". United States. https://www.osti.gov/servlets/purl/866137.
@article{osti_866137,
title = {Process for producing chalcogenide semiconductors},
author = {Noufi, Rommel and Chen, Yih-Wen},
abstractNote = {A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

Save / Share: