Process for producing chalcogenide semiconductors
Abstract
A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.
- Inventors:
-
- Westminster, CO
- Omaha, NE
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 866137
- Patent Number(s):
- 4642140
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; producing; chalcogenide; semiconductors; semiconductor; material; disclosed; forming; base; metal; layer; contacting; solution; ph; containing; chalcogen; chalcogenize; form; metal layer; semiconductor material; base metal; chalcogenide semiconductor; producing chalcogenide; /438/136/148/427/
Citation Formats
Noufi, Rommel, and Chen, Yih-Wen. Process for producing chalcogenide semiconductors. United States: N. p., 1987.
Web.
Noufi, Rommel, & Chen, Yih-Wen. Process for producing chalcogenide semiconductors. United States.
Noufi, Rommel, and Chen, Yih-Wen. Thu .
"Process for producing chalcogenide semiconductors". United States. https://www.osti.gov/servlets/purl/866137.
@article{osti_866137,
title = {Process for producing chalcogenide semiconductors},
author = {Noufi, Rommel and Chen, Yih-Wen},
abstractNote = {A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}
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