Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
Abstract
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.
- Inventors:
-
- Chestnut Hill, MA
- Arlington, MA
- Bedford, MA
- Framingham, MA
- Issue Date:
- Research Org.:
- Solar Energy Research Institute
- OSTI Identifier:
- 866090
- Patent Number(s):
- 4632712
- Application Number:
- 06/678,364
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- XZ-0-9158-1; F19628-80-C-0002
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- reducing; dislocations; semiconductors; utilizing; repeated; thermal; cycling; multistage; epitaxial; growth; dislocation; densities; reduced; growing; vapor; phase; employing; technique; interrupting; cooling; layer; deposited; repeating; process; quality; active; top; achieved; method; interrupted; coupled; permits; trapped; initial; stages; top layer; thermal cycling; vapor phase; epitaxial growth; repeated thermal; semiconductors utilizing; reducing dislocations; multistage epitaxial; utilizing repeated; growing semiconductors; initial stage; interrupting growth; dislocation densities; /117/136/148/438/
Citation Formats
Fan, John C. C., Tsaur, Bor-Yeu, Gale, Ronald P, and Davis, Frances M. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth. United States: N. p., 1986.
Web.
Fan, John C. C., Tsaur, Bor-Yeu, Gale, Ronald P, & Davis, Frances M. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth. United States.
Fan, John C. C., Tsaur, Bor-Yeu, Gale, Ronald P, and Davis, Frances M. Tue .
"Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth". United States. https://www.osti.gov/servlets/purl/866090.
@article{osti_866090,
title = {Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth},
author = {Fan, John C. C. and Tsaur, Bor-Yeu and Gale, Ronald P and Davis, Frances M},
abstractNote = {Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 30 00:00:00 EST 1986},
month = {Tue Dec 30 00:00:00 EST 1986}
}
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