skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solid state radiative heat pump

Abstract

A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, amore » coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.« less

Inventors:
 [1]
  1. Oakland, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
866079
Patent Number(s):
4628695
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
solid; radiative; heat; pump; 10; 50; 70; operable; temperature; 300; degree; utilizes; semiconductor; gap; energy; range; 03-0; 25; operated; reversibly; produce; excess; deficit; charge; carriers; compared; thermal; equilibrium; form; infrared; photodiode; 21; 71; forward; reverse; bias; emit; radiation; homogeneous; 51; subjected; orthogonal; magnetic; electric; fields; methods; enhancing; transmission; active; surface; disclosed; method; anti-reflection; layer; 19; coated; 13; 11; index; refraction; equal; square; root; passive; 75; spaced; 73; submicron; vacuum; refractive; third; coupler; 91; paraboloid; reflecting; 92; contact; 53; radiative heat; charge carrier; gap energy; charge carriers; heat pump; electric field; infrared radiation; reflecting surface; active surface; electric fields; thermal equilibrium; third method; reverse bias; /62/

Citation Formats

Berdahl, Paul H. Solid state radiative heat pump. United States: N. p., 1986. Web.
Berdahl, Paul H. Solid state radiative heat pump. United States.
Berdahl, Paul H. Wed . "Solid state radiative heat pump". United States. https://www.osti.gov/servlets/purl/866079.
@article{osti_866079,
title = {Solid state radiative heat pump},
author = {Berdahl, Paul H},
abstractNote = {A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

Save / Share: