Title: Laser/plasma chemical processing of substrates

Abstract

A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.

Inventors:

Gee, James M ^[1]; Hargis, Jr., Philip J. ^[2]

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1. Albuquerque, NM
2. (Albuquerque, NM)

Issue Date:

1986-01-01

Research Org.:

Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:

866060

Patent Number(s):

4624736

Assignee:

United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02488 - {Insulating materials}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/268 - using electromagnetic radiation, e.g. laser radiation
H01L21/3065 - Plasma etching
H01L21/31116 - {by dry-etching}
H01L21/31612 - {on a silicon body}
H01L21/3185 - {of siliconnitrides}

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DOE Contract Number:  

AC04-76

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

laser; plasma; chemical; processing; substrates; process; modification; substrate; surfaces; described; etching; deposition; surface; occurs; presence; reactive; species; directed; beam; coherent; light; substrate surface; chemical processing; coherent light; reactive species; chemical process; substrate surfaces; active species; directed beam; /216/118/156/204/219/427/