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Title: Superlattice optical device

Abstract

A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

Inventors:
 [1];  [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
OSTI Identifier:
866010
Patent Number(s):
4616241
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
superlattice; optical; device; semiconductor; direct; transitions; conduction; band; valence; wave; vector; formed; plurality; alternating; layers; materials; material; bandgap; indirect; conduction band; alternating layers; optical device; semiconductor optical; valence band; direct bandgap; /257/372/

Citation Formats

Biefeld, Robert M, Fritz, Ian J, Gourley, Paul L, and Osbourn, Gordon C. Superlattice optical device. United States: N. p., 1986. Web.
Biefeld, Robert M, Fritz, Ian J, Gourley, Paul L, & Osbourn, Gordon C. Superlattice optical device. United States.
Biefeld, Robert M, Fritz, Ian J, Gourley, Paul L, and Osbourn, Gordon C. Wed . "Superlattice optical device". United States. https://www.osti.gov/servlets/purl/866010.
@article{osti_866010,
title = {Superlattice optical device},
author = {Biefeld, Robert M and Fritz, Ian J and Gourley, Paul L and Osbourn, Gordon C},
abstractNote = {A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

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