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Title: Electron-beam-induced information storage in hydrogenated amorphous silicon device

Abstract

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

Inventors:
 [1]
  1. Denver, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
865991
Patent Number(s):
4613519
Assignee:
United State of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
G - PHYSICS G06 - COMPUTING G06K - RECOGNITION OF DATA
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electron-beam-induced; information; storage; hydrogenated; amorphous; silicon; device; method; recording; storing; comprising; depositing; substrate; form; charge-collection; generating; defects; recombination; centers; reduce; lifetime; carriers; reducing; efficiency; mode; scanning; probe; instruments; regions; contain; appear; darker; comparison; leading; contrast; formation; pattern; recognition; darkened; restored; original; heating; temperature; 100; degree; 250; sufficient; period; time; provide; restoration; silicon device; pattern recognition; collection device; amorphous silicon; hydrogenated amorphous; scanning probe; collection efficiency; information storage; sufficient period; storing information; reducing charge; /427/346/365/438/

Citation Formats

Yacobi, Ben G. Electron-beam-induced information storage in hydrogenated amorphous silicon device. United States: N. p., 1986. Web.
Yacobi, Ben G. Electron-beam-induced information storage in hydrogenated amorphous silicon device. United States.
Yacobi, Ben G. Wed . "Electron-beam-induced information storage in hydrogenated amorphous silicon device". United States. https://www.osti.gov/servlets/purl/865991.
@article{osti_865991,
title = {Electron-beam-induced information storage in hydrogenated amorphous silicon device},
author = {Yacobi, Ben G},
abstractNote = {A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

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