Electron-beam-induced information storage in hydrogenated amorphous silicon device
Abstract
A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.
- Inventors:
-
- Denver, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 865991
- Patent Number(s):
- 4613519
- Assignee:
- United State of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G06 - COMPUTING G06K - RECOGNITION OF DATA
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electron-beam-induced; information; storage; hydrogenated; amorphous; silicon; device; method; recording; storing; comprising; depositing; substrate; form; charge-collection; generating; defects; recombination; centers; reduce; lifetime; carriers; reducing; efficiency; mode; scanning; probe; instruments; regions; contain; appear; darker; comparison; leading; contrast; formation; pattern; recognition; darkened; restored; original; heating; temperature; 100; degree; 250; sufficient; period; time; provide; restoration; silicon device; pattern recognition; collection device; amorphous silicon; hydrogenated amorphous; scanning probe; collection efficiency; information storage; sufficient period; storing information; reducing charge; /427/346/365/438/
Citation Formats
Yacobi, Ben G. Electron-beam-induced information storage in hydrogenated amorphous silicon device. United States: N. p., 1986.
Web.
Yacobi, Ben G. Electron-beam-induced information storage in hydrogenated amorphous silicon device. United States.
Yacobi, Ben G. Wed .
"Electron-beam-induced information storage in hydrogenated amorphous silicon device". United States. https://www.osti.gov/servlets/purl/865991.
@article{osti_865991,
title = {Electron-beam-induced information storage in hydrogenated amorphous silicon device},
author = {Yacobi, Ben G},
abstractNote = {A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}