Electro-optical SLS devices for operating at new wavelength ranges
Abstract
An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 865959
- Patent Number(s):
- 4607272
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electro-optical; sls; devices; operating; wavelength; ranges; intrinsic; semiconductor; device; p-n; junction; intrinsically; responsive; cooled; electromagnetic; radiation; range; 8-12; consists; strained-layer; superlattice; alternating; layers; iii-v; semiconductors; mismatched; lattice; constants; bulk; form; set; inas; 1-x; sb; aobut; 1-y; chosen; bandgap; resulting; layer; minimum; family; constant; larger; strained-layer superlattice; wavelength range; lattice constant; p-n junction; alternating layers; electromagnetic radiation; optical device; wavelength ranges; electro-optical device; iii-v semiconductor; intrinsic semiconductor; layer superlattice; iii-v semiconductors; /257/
Citation Formats
Osbourn, Gordon C. Electro-optical SLS devices for operating at new wavelength ranges. United States: N. p., 1986.
Web.
Osbourn, Gordon C. Electro-optical SLS devices for operating at new wavelength ranges. United States.
Osbourn, Gordon C. Wed .
"Electro-optical SLS devices for operating at new wavelength ranges". United States. https://www.osti.gov/servlets/purl/865959.
@article{osti_865959,
title = {Electro-optical SLS devices for operating at new wavelength ranges},
author = {Osbourn, Gordon C},
abstractNote = {An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}