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Title: Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Abstract

Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.

Inventors:
 [1];  [2]
  1. Oak Ridge, TN
  2. Madrid, ES
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
865945
Patent Number(s):
4604225
Assignee:
United States of America as represented by Secretary of (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
refractory; oxide; hosts; power; broadly; tunable; laser; quantum; efficiency; method; crystals; high-quantum; thermal; stability; host; materials; formed; removing; hydrogen; single; crystal; material; level; below; 10; 12; protons; cm; subsequently; thermochemically; reducing; oxygen; content; form; sufficient; anion; vacancies; short-lived; luminescence; produced; optically; excited; thermal stability; oxygen content; single crystal; removing hydrogen; oxide material; quantum efficiency; tunable laser; refractory oxide; broadly tunable; optically excited; oxide crystals; oxygen anion; host material; oxide crystal; high-quantum efficiency; host materials; /252/423/

Citation Formats

Chen, Yok, and Gonzalez, Roberto. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States: N. p., 1986. Web.
Chen, Yok, & Gonzalez, Roberto. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States.
Chen, Yok, and Gonzalez, Roberto. Wed . "Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same". United States. https://www.osti.gov/servlets/purl/865945.
@article{osti_865945,
title = {Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same},
author = {Chen, Yok and Gonzalez, Roberto},
abstractNote = {Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}