Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Title: Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

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Abstract

Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.

Inventors:

Chen, Yok ^[1]; Gonzalez, Roberto ^[2]

Oak Ridge, TN
Madrid, ES

Issue Date:: 1986-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

OSTI Identifier:: 865945

Patent Number(s):: 4604225

Assignee:: United States of America as represented by Secretary of (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
C09K11/641 - {Chalcogenides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/00 - Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
C09K11/55 - containing beryllium, magnesium, alkali metals or alkaline earth metals

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
C30B29/16 - Oxides

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S3/1681 - {using colour centres}

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DOE Contract Number:: W-7405-ENG-26

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: refractory; oxide; hosts; power; broadly; tunable; laser; quantum; efficiency; method; crystals; high-quantum; thermal; stability; host; materials; formed; removing; hydrogen; single; crystal; material; level; below; 10; 12; protons; cm; subsequently; thermochemically; reducing; oxygen; content; form; sufficient; anion; vacancies; short-lived; luminescence; produced; optically; excited; thermal stability; oxygen content; single crystal; removing hydrogen; oxide material; quantum efficiency; tunable laser; refractory oxide; broadly tunable; optically excited; oxide crystals; oxygen anion; host material; oxide crystal; high-quantum efficiency; host materials; /252/423/

Citation Formats


                    Chen, Yok, and Gonzalez, Roberto. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same.  United States: N. p., 1986. 
        Web.

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                    Chen, Yok, & Gonzalez, Roberto. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same.  United States.

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                    Chen, Yok, and Gonzalez, Roberto. Wed .  
        "Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same".  United States.  https://www.osti.gov/servlets/purl/865945.

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@article{osti_865945,

  title        = {Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same},

  author       = {Chen, Yok and Gonzalez, Roberto},

  abstractNote = {Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1986},

  month        = {1}

}

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Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

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