Guidance system for low angle silicon ribbon growth
Abstract
In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.
- Inventors:
-
- Harvard, MA
- Ashby, MA
- Denver, CO
- Issue Date:
- OSTI Identifier:
- 865914
- Patent Number(s):
- 4599132
- Application Number:
- 06/692,844
- Assignee:
- Energy Materials Corporation (So. Lancaster, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- XB3021911
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- guidance; angle; silicon; ribbon; growth; sheet; process; puller; mechanism; advances; seed; crystal; solidified; cooled; zone; melt; respect; horizontal; supported; ramp; adjacent; variations; vertical; position; isolated; growing; extremely; preferably; maintaining; length; cm; spacing; 15; seed crystal; growth process; vertical position; silicon sheet; ribbon growth; silicon ribbon; growth zone; angle silicon; /117/
Citation Formats
Jewett, David N, Bates, Herbert E, and Milstein, Joseph B. Guidance system for low angle silicon ribbon growth. United States: N. p., 1986.
Web.
Jewett, David N, Bates, Herbert E, & Milstein, Joseph B. Guidance system for low angle silicon ribbon growth. United States.
Jewett, David N, Bates, Herbert E, and Milstein, Joseph B. Tue .
"Guidance system for low angle silicon ribbon growth". United States. https://www.osti.gov/servlets/purl/865914.
@article{osti_865914,
title = {Guidance system for low angle silicon ribbon growth},
author = {Jewett, David N and Bates, Herbert E and Milstein, Joseph B},
abstractNote = {In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 08 00:00:00 EDT 1986},
month = {Tue Jul 08 00:00:00 EDT 1986}
}
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