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Title: Guidance system for low angle silicon ribbon growth

Abstract

In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.

Inventors:
 [1];  [2];  [3]
  1. Harvard, MA
  2. Ashby, MA
  3. Denver, CO
Issue Date:
OSTI Identifier:
865914
Patent Number(s):
4599132
Application Number:
06/692,844
Assignee:
Energy Materials Corporation (So. Lancaster, MA)
DOE Contract Number:  
XB3021911
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
guidance; angle; silicon; ribbon; growth; sheet; process; puller; mechanism; advances; seed; crystal; solidified; cooled; zone; melt; respect; horizontal; supported; ramp; adjacent; variations; vertical; position; isolated; growing; extremely; preferably; maintaining; length; cm; spacing; 15; seed crystal; growth process; vertical position; silicon sheet; ribbon growth; silicon ribbon; growth zone; angle silicon; /117/

Citation Formats

Jewett, David N, Bates, Herbert E, and Milstein, Joseph B. Guidance system for low angle silicon ribbon growth. United States: N. p., 1986. Web.
Jewett, David N, Bates, Herbert E, & Milstein, Joseph B. Guidance system for low angle silicon ribbon growth. United States.
Jewett, David N, Bates, Herbert E, and Milstein, Joseph B. Tue . "Guidance system for low angle silicon ribbon growth". United States. https://www.osti.gov/servlets/purl/865914.
@article{osti_865914,
title = {Guidance system for low angle silicon ribbon growth},
author = {Jewett, David N and Bates, Herbert E and Milstein, Joseph B},
abstractNote = {In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {7}
}

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