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Title: Polysilane positive photoresist materials and methods for their use

Abstract

New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
865851
Patent Number(s):
4588801
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08G - MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
polysilane; positive; photoresist; materials; methods; copolymers; comprise; recurring; units; -si; 1-13; carbon; atoms; independently; hydrogen; alkyl; cycloalkyl; phenyl; alkylphenyl; phenylalkyl; proviso; contains; moiety; alkylene; forming; adjoining; atom; 3-13; ethyl; methyl; n-propyl; corresponding; homopolysilanes; provided; ultraviolet; irradiation; photodepolymerize; form; volatile; products; result; represent; photoresists; enable; direct; formation; image; eliminating; heretofore; required; step; resist material; form volatile; carbon atoms; carbon atom; photoresist material; recurring units; ultraviolet irradiation; photoresist materials; comprise recurring; direct formation; heretofore required; positive photoresist; polysilane copolymers; polysilane positive; copolymers comprise; /528/430/999/

Citation Formats

Harrah, Larry A, and Zeigler, John M. Polysilane positive photoresist materials and methods for their use. United States: N. p., 1986. Web.
Harrah, Larry A, & Zeigler, John M. Polysilane positive photoresist materials and methods for their use. United States.
Harrah, Larry A, and Zeigler, John M. Wed . "Polysilane positive photoresist materials and methods for their use". United States. https://www.osti.gov/servlets/purl/865851.
@article{osti_865851,
title = {Polysilane positive photoresist materials and methods for their use},
author = {Harrah, Larry A and Zeigler, John M},
abstractNote = {New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}