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Title: Metal organic chemical vapor deposition of 111-v compounds on silicon

Abstract

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Inventors:
 [1]
  1. Wellesley, MA
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
865847
Patent Number(s):
4588451
Assignee:
Advanced Energy Fund Limited Partnership (Peterborough, NH)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
metal; organic; chemical; vapor; deposition; 111-v; compounds; silicon; expitaxial; composite; comprising; films; iii-v; compound; semiconductor; gallium; arsenide; gaas; aluminum; gaalas; single; crystal; substrates; disclosed; process; manufacturing; phase; epitaxial; composites; described; devices; based; particular; utility; light; sensitive; solid; solar; cells; metal organic; chemical deposition; iii-v compound; silicon substrates; chemical vapor; solar cell; solar cells; vapor deposition; silicon substrate; single crystal; semiconductor device; compound semiconductor; semiconductor devices; vapor phase; composite comprising; light sensitive; gallium arsenide; particular utility; crystal silicon; organic chemical; gallium aluminum; /117/136/148/257/438/

Citation Formats

Vernon, Stanley M. Metal organic chemical vapor deposition of 111-v compounds on silicon. United States: N. p., 1986. Web.
Vernon, Stanley M. Metal organic chemical vapor deposition of 111-v compounds on silicon. United States.
Vernon, Stanley M. Wed . "Metal organic chemical vapor deposition of 111-v compounds on silicon". United States. https://www.osti.gov/servlets/purl/865847.
@article{osti_865847,
title = {Metal organic chemical vapor deposition of 111-v compounds on silicon},
author = {Vernon, Stanley M},
abstractNote = {Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

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