Metal organic chemical vapor deposition of 111-v compounds on silicon
Abstract
Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.
- Inventors:
-
- Wellesley, MA
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- OSTI Identifier:
- 865847
- Patent Number(s):
- 4588451
- Assignee:
- Advanced Energy Fund Limited Partnership (Peterborough, NH)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- metal; organic; chemical; vapor; deposition; 111-v; compounds; silicon; expitaxial; composite; comprising; films; iii-v; compound; semiconductor; gallium; arsenide; gaas; aluminum; gaalas; single; crystal; substrates; disclosed; process; manufacturing; phase; epitaxial; composites; described; devices; based; particular; utility; light; sensitive; solid; solar; cells; metal organic; chemical deposition; iii-v compound; silicon substrates; chemical vapor; solar cell; solar cells; vapor deposition; silicon substrate; single crystal; semiconductor device; compound semiconductor; semiconductor devices; vapor phase; composite comprising; light sensitive; gallium arsenide; particular utility; crystal silicon; organic chemical; gallium aluminum; /117/136/148/257/438/
Citation Formats
Vernon, Stanley M. Metal organic chemical vapor deposition of 111-v compounds on silicon. United States: N. p., 1986.
Web.
Vernon, Stanley M. Metal organic chemical vapor deposition of 111-v compounds on silicon. United States.
Vernon, Stanley M. Wed .
"Metal organic chemical vapor deposition of 111-v compounds on silicon". United States. https://www.osti.gov/servlets/purl/865847.
@article{osti_865847,
title = {Metal organic chemical vapor deposition of 111-v compounds on silicon},
author = {Vernon, Stanley M},
abstractNote = {Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}
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