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Title: Thick crystalline films on foreign substrates

Abstract

To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.

Inventors:
 [1];  [2];  [3]
  1. Sudbury, MA
  2. Somerville, MA
  3. Acton, MA
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
OSTI Identifier:
865792
Patent Number(s):
4576676
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC02-82ER13019
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thick; crystalline; films; foreign; substrates; achieve; uniform; texture; grains; single; orientation; film; substrate; formed; section; zone-melting; recrystallization; initiated; extended; method; employ; planar; constriction; patterns; filter; crystalline films; single crystalline; single crystal; foreign substrates; orientation filter; /438/117/

Citation Formats

Smith, Henry I, Atwater, Harry A, and Geis, Michael W. Thick crystalline films on foreign substrates. United States: N. p., 1986. Web.
Smith, Henry I, Atwater, Harry A, & Geis, Michael W. Thick crystalline films on foreign substrates. United States.
Smith, Henry I, Atwater, Harry A, and Geis, Michael W. Wed . "Thick crystalline films on foreign substrates". United States. https://www.osti.gov/servlets/purl/865792.
@article{osti_865792,
title = {Thick crystalline films on foreign substrates},
author = {Smith, Henry I and Atwater, Harry A and Geis, Michael W},
abstractNote = {To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

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