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Title: Electron beam enhanced surface modification for making highly resolved structures

Abstract

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Inventors:
 [1]
  1. Golden, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
865748
Patent Number(s):
4566937
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electron; beam; enhanced; surface; modification; highly; resolved; structures; method; forming; resolution; submicron; substrate; provided; direct; writing; partial; pressure; selected; gas; phase; characterized; ability; dissociate; stable; gaseous; leaving; reactant; fragment; combines; material; energy; form; compound; variations; provide; semiconductor; device; regions; doped; silicon; substrates; interconnect; lines; active; sites; dimensional; electronic; chip; optical; mass; storage; devices; color; differentiated; data; resist; selective; etching; techniques; selective etching; silicon substrates; active sites; surface modification; gas phase; substrate material; storage device; electron beam; silicon substrate; semiconductor device; partial pressure; beam energy; storage devices; doped silicon; method provide; selected gas; stable gaseous; enhanced surface; etching techniques; selective etch; stable gas; /216/204/219/250/427/438/

Citation Formats

Pitts, John R. Electron beam enhanced surface modification for making highly resolved structures. United States: N. p., 1986. Web.
Pitts, John R. Electron beam enhanced surface modification for making highly resolved structures. United States.
Pitts, John R. Wed . "Electron beam enhanced surface modification for making highly resolved structures". United States. https://www.osti.gov/servlets/purl/865748.
@article{osti_865748,
title = {Electron beam enhanced surface modification for making highly resolved structures},
author = {Pitts, John R},
abstractNote = {A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

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