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Title: Graphoepitaxy by encapsulation

Abstract

Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.

Inventors:
 [1];  [2];  [3];  [4]
  1. Acton, MA
  2. Sudbury, MA
  3. Brookline, MA
  4. Lexington, MA
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
OSTI Identifier:
865744
Patent Number(s):
4565599
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC02-80ER10179
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
graphoepitaxy; encapsulation; improvements; graphoepitaxial; process; obtaining; epitaxial; preferred; orientation; films; described; cap; material; formed; film; oriented; artificial; surface-relief; structure; substrate; heated; irradiation; electromagnetic; radiation; electromagnetic radiation; /117/148/

Citation Formats

Geis, Michael W, Smith, Henry I, Antoniadis, Dimitri A, and Flanders, Dale C. Graphoepitaxy by encapsulation. United States: N. p., 1986. Web.
Geis, Michael W, Smith, Henry I, Antoniadis, Dimitri A, & Flanders, Dale C. Graphoepitaxy by encapsulation. United States.
Geis, Michael W, Smith, Henry I, Antoniadis, Dimitri A, and Flanders, Dale C. Wed . "Graphoepitaxy by encapsulation". United States. https://www.osti.gov/servlets/purl/865744.
@article{osti_865744,
title = {Graphoepitaxy by encapsulation},
author = {Geis, Michael W and Smith, Henry I and Antoniadis, Dimitri A and Flanders, Dale C},
abstractNote = {Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

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