Direct determination of quantum efficiency of semiconducting films
Abstract
Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.
- Inventors:
-
- Princeton, NJ
- Lawrenceville, NJ
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- OSTI Identifier:
- 865742
- Patent Number(s):
- 4564808
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H02 - GENERATION H02S - GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- direct; determination; quantum; efficiency; semiconducting; films; photovoltaic; semiconductor; samples; determined; directly; requiring; built-in; photovoltage; generated; sample; electrodes; attached; form; schottky; barrier; therewith; illuminated; photocurrent; carriers; collected; external; bias; voltage; impressed; measured; calculated; therefrom; schottky barrier; bias voltage; quantum efficiency; semiconductor sample; conducting films; semiconductor samples; semiconducting films; conducting film; /324/
Citation Formats
Faughnan, Brian W, and Hanak, Joseph J. Direct determination of quantum efficiency of semiconducting films. United States: N. p., 1986.
Web.
Faughnan, Brian W, & Hanak, Joseph J. Direct determination of quantum efficiency of semiconducting films. United States.
Faughnan, Brian W, and Hanak, Joseph J. Wed .
"Direct determination of quantum efficiency of semiconducting films". United States. https://www.osti.gov/servlets/purl/865742.
@article{osti_865742,
title = {Direct determination of quantum efficiency of semiconducting films},
author = {Faughnan, Brian W and Hanak, Joseph J},
abstractNote = {Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}
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