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Title: Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate

Abstract

A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.

Inventors:
 [1];  [1]
  1. Ames, IA
Issue Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA; Iowa State University, Ames, IA (US)
OSTI Identifier:
865693
Patent Number(s):
4556812
Application Number:
06/632,165
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
acoustic; resonator; electrodes; aln; layer; gaas; substrate; method; fabricating; wave; processing; steps; accomplished; single; involves; deposition; multi-layered; structure; followed; series; fabrication; define; composite; resulting; comprises; layers; exterior; wave resonator; acoustic wave; method involves; processing steps; gaas substrate; resulting resonator; aln layer; processing step; substrate followed; fabrication steps; method involve; rate followed; acoustic resonator; aln structure; involves deposition; /310/257/

Citation Formats

Kline, Gerald R, and Lakin, Kenneth M. Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate. United States: N. p., 1985. Web.
Kline, Gerald R, & Lakin, Kenneth M. Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate. United States.
Kline, Gerald R, and Lakin, Kenneth M. Tue . "Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate". United States. https://www.osti.gov/servlets/purl/865693.
@article{osti_865693,
title = {Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate},
author = {Kline, Gerald R and Lakin, Kenneth M},
abstractNote = {A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {12}
}

Patent:

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