Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate
Abstract
A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.
- Inventors:
-
- Ames, IA
- Issue Date:
- Research Org.:
- Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
- OSTI Identifier:
- 865693
- Patent Number(s):
- 4556812
- Application Number:
- 06/632,165
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
- DOE Contract Number:
- W-7405-ENG-82
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- acoustic; resonator; electrodes; aln; layer; gaas; substrate; method; fabricating; wave; processing; steps; accomplished; single; involves; deposition; multi-layered; structure; followed; series; fabrication; define; composite; resulting; comprises; layers; exterior; wave resonator; acoustic wave; method involves; processing steps; gaas substrate; resulting resonator; aln layer; processing step; substrate followed; fabrication steps; method involve; rate followed; acoustic resonator; aln structure; involves deposition; /310/257/
Citation Formats
Kline, Gerald R, and Lakin, Kenneth M. Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate. United States: N. p., 1985.
Web.
Kline, Gerald R, & Lakin, Kenneth M. Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate. United States.
Kline, Gerald R, and Lakin, Kenneth M. Tue .
"Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate". United States. https://www.osti.gov/servlets/purl/865693.
@article{osti_865693,
title = {Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate},
author = {Kline, Gerald R and Lakin, Kenneth M},
abstractNote = {A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 03 00:00:00 EST 1985},
month = {Tue Dec 03 00:00:00 EST 1985}
}
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