Method for production of free-standing polycrystalline boron phosphide film
Abstract
A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 865656
- Patent Number(s):
- 4550014
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; production; free-standing; polycrystalline; boron; phosphide; film; process; producing; comprises; growing; vertical; growth; apparatus; metal; substrate; coefficient; thermal; expansion; sufficiently; separates; cleanly; cooling; preferably; titanium; electronic; device; fabrication; device fabrication; metal substrate; thermal expansion; film comprises; boron phosphide; polycrystalline boron; phosphide film; electronic device; crystalline boron; comprises growing; free-standing polycrystalline; growth apparatus; preferably titanium; /423/117/252/427/438/
Citation Formats
Baughman, Richard J, and Ginley, David S. Method for production of free-standing polycrystalline boron phosphide film. United States: N. p., 1985.
Web.
Baughman, Richard J, & Ginley, David S. Method for production of free-standing polycrystalline boron phosphide film. United States.
Baughman, Richard J, and Ginley, David S. Tue .
"Method for production of free-standing polycrystalline boron phosphide film". United States. https://www.osti.gov/servlets/purl/865656.
@article{osti_865656,
title = {Method for production of free-standing polycrystalline boron phosphide film},
author = {Baughman, Richard J and Ginley, David S},
abstractNote = {A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1985},
month = {Tue Jan 01 00:00:00 EST 1985}
}
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