Method for production of free-standing polycrystalline boron phosphide film

Title: Method for production of free-standing polycrystalline boron phosphide film

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Abstract

A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

Inventors:

Baughman, Richard J ^[1]; Ginley, David S ^[1]

Albuquerque, NM

Issue Date:: 1985-01-01

Research Org.:: AT&T Corp., Albuquerque, NM (United States)

OSTI Identifier:: 865656

Patent Number(s):: 4550014

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/01 - on temporary substrates, e.g. substrates subsequently removed by etching

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S117/915 - Separating from substrate

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B25/084 - {of boron}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02543 - {Phosphides}
H01L21/02425 - {Conductive materials, e.g. metallic silicides}
H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02658 - {Pretreatments
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; production; free-standing; polycrystalline; boron; phosphide; film; process; producing; comprises; growing; vertical; growth; apparatus; metal; substrate; coefficient; thermal; expansion; sufficiently; separates; cleanly; cooling; preferably; titanium; electronic; device; fabrication; device fabrication; metal substrate; thermal expansion; film comprises; boron phosphide; polycrystalline boron; phosphide film; electronic device; crystalline boron; comprises growing; free-standing polycrystalline; growth apparatus; preferably titanium; /423/117/252/427/438/

Citation Formats


                    Baughman, Richard J, and Ginley, David S. Method for production of free-standing polycrystalline boron phosphide film.  United States: N. p., 1985. 
        Web.

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                    Baughman, Richard J, & Ginley, David S. Method for production of free-standing polycrystalline boron phosphide film.  United States.

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                    Baughman, Richard J, and Ginley, David S. Tue .  
        "Method for production of free-standing polycrystalline boron phosphide film".  United States.  https://www.osti.gov/servlets/purl/865656.

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@article{osti_865656,

  title        = {Method for production of free-standing polycrystalline boron phosphide film},

  author       = {Baughman, Richard J and Ginley, David S},

  abstractNote = {A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {1}

}

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