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Title: Method for production of free-standing polycrystalline boron phosphide film

Abstract

A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT&T Corp., Albuquerque, NM (United States)
OSTI Identifier:
865656
Patent Number(s):
4550014
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; production; free-standing; polycrystalline; boron; phosphide; film; process; producing; comprises; growing; vertical; growth; apparatus; metal; substrate; coefficient; thermal; expansion; sufficiently; separates; cleanly; cooling; preferably; titanium; electronic; device; fabrication; device fabrication; metal substrate; thermal expansion; film comprises; boron phosphide; polycrystalline boron; phosphide film; electronic device; crystalline boron; comprises growing; free-standing polycrystalline; growth apparatus; preferably titanium; /423/117/252/427/438/

Citation Formats

Baughman, Richard J, and Ginley, David S. Method for production of free-standing polycrystalline boron phosphide film. United States: N. p., 1985. Web.
Baughman, Richard J, & Ginley, David S. Method for production of free-standing polycrystalline boron phosphide film. United States.
Baughman, Richard J, and Ginley, David S. Tue . "Method for production of free-standing polycrystalline boron phosphide film". United States. https://www.osti.gov/servlets/purl/865656.
@article{osti_865656,
title = {Method for production of free-standing polycrystalline boron phosphide film},
author = {Baughman, Richard J and Ginley, David S},
abstractNote = {A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {1}
}

Patent:

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