Method for removing semiconductor layers from salt substrates

Shuskus, Alexander J; Cowher, Melvyn E

Title: Method for removing semiconductor layers from salt substrates

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Abstract

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Inventors:

Shuskus, Alexander J ^[1]; Cowher, Melvyn E ^[2]

West Hartford, CT
East Brookfield, MA

Issue Date:: 1985-08-27

Research Org.:: Solar Energy Research Institute

OSTI Identifier:: 865565

Patent Number(s):: 4537651

Application Number:: 06/441,325

Assignee:: United Technologies Corporation (Hartford, CT)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S117/915 - Separating from substrate

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T156/1911 - Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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DOE Contract Number:: XS-0-9002-5

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; removing; semiconductor; layers; salt; substrates; described; cvd; layer; alkali; halide; substrate; following; deposition; semiconductor-substrate; combination; supported; material; tungsten; readily; wet; molten; temperature; raised; melting; melted; removed; capillary; action; wettable; support; melting temperature; semiconductor layer; molten alkali; capillary action; halide salt; semiconductor layers; substrate following; alkali halide; salt substrates; salt substrate; /117/156/

Citation Formats


                    Shuskus, Alexander J, and Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates.  United States: N. p., 1985. 
        Web.

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                    Shuskus, Alexander J, & Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates.  United States.

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                    Shuskus, Alexander J, and Cowher, Melvyn E. Tue .  
        "Method for removing semiconductor layers from salt substrates".  United States.  https://www.osti.gov/servlets/purl/865565.

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@article{osti_865565,

  title        = {Method for removing semiconductor layers from salt substrates},

  author       = {Shuskus, Alexander J and Cowher, Melvyn E},

  abstractNote = {A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {8}

}

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