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Title: Method for removing semiconductor layers from salt substrates

Abstract

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Inventors:
 [1];  [2]
  1. West Hartford, CT
  2. East Brookfield, MA
Issue Date:
Research Org.:
Solar Energy Research Institute
OSTI Identifier:
865565
Patent Number(s):
4537651
Application Number:
06/441,325
Assignee:
United Technologies Corporation (Hartford, CT)
DOE Contract Number:  
XS-0-9002-5
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; removing; semiconductor; layers; salt; substrates; described; cvd; layer; alkali; halide; substrate; following; deposition; semiconductor-substrate; combination; supported; material; tungsten; readily; wet; molten; temperature; raised; melting; melted; removed; capillary; action; wettable; support; melting temperature; semiconductor layer; molten alkali; capillary action; halide salt; semiconductor layers; substrate following; alkali halide; salt substrates; salt substrate; /117/156/

Citation Formats

Shuskus, Alexander J, and Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates. United States: N. p., 1985. Web.
Shuskus, Alexander J, & Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates. United States.
Shuskus, Alexander J, and Cowher, Melvyn E. Tue . "Method for removing semiconductor layers from salt substrates". United States. https://www.osti.gov/servlets/purl/865565.
@article{osti_865565,
title = {Method for removing semiconductor layers from salt substrates},
author = {Shuskus, Alexander J and Cowher, Melvyn E},
abstractNote = {A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}

Patent:

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