Method for removing semiconductor layers from salt substrates

Title: Method for removing semiconductor layers from salt substrates

Full Record
Other Related Research

Abstract

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Inventors:

Shuskus, Alexander J ^[1]; Cowher, Melvyn E ^[2]

West Hartford, CT
East Brookfield, MA

Issue Date:: 1985-08-27

Research Org.:: Solar Energy Research Institute

OSTI Identifier:: 865565

Patent Number(s):: 4537651

Application Number:: 06/441,325

Assignee:: United Technologies Corporation (Hartford, CT)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Show more

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S117/915 - Separating from substrate

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T156/1911 - Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Show less

DOE Contract Number:: XS-0-9002-5

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; removing; semiconductor; layers; salt; substrates; described; cvd; layer; alkali; halide; substrate; following; deposition; semiconductor-substrate; combination; supported; material; tungsten; readily; wet; molten; temperature; raised; melting; melted; removed; capillary; action; wettable; support; melting temperature; semiconductor layer; molten alkali; capillary action; halide salt; semiconductor layers; substrate following; alkali halide; salt substrates; salt substrate; /117/156/

Citation Formats


                    Shuskus, Alexander J, and Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates.  United States: N. p., 1985. 
        Web.

Copy to clipboard


                    Shuskus, Alexander J, & Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates.  United States.

Copy to clipboard


                    Shuskus, Alexander J, and Cowher, Melvyn E. Tue .  
        "Method for removing semiconductor layers from salt substrates".  United States.  https://www.osti.gov/servlets/purl/865565.

Copy to clipboard


                    
@article{osti_865565,

  title        = {Method for removing semiconductor layers from salt substrates},

  author       = {Shuskus, Alexander J and Cowher, Melvyn E},

  abstractNote = {A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {8}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Patent Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; ...

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatusmore » are also disclosed.« less
Full Text Available
Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

Patent Warren, William L [Albuquerque, NM]; Vanheusden, Karel J. R. [Albuquerque, NM]; Schwank, James R [Albuquerque, NM]; ...

A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic ormore »« less
Full Text Available
Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Patent Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; ...

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using anmore »« less
Full Text Available
Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

Patent Farino, Anthony J.

A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates needmore »« less
Full Text Available
Methods of removing a ceramic coating from a substrate

Patent Kool, Lawrence Bernard

A method for removing a ceramic coating from a substrate is presented. The method includes contacting the ceramic coating with a composition including a fluoride source and nitric acid. A method of forming a component having a variation in saturation magnetization is presented. The method includes masking selected portions of a surface of a metallic component using a ceramic coating to form a masked metallic component; selectively diffusing nitrogen into the metallic component by exposing the masked metallic component to a nitrogen-rich atmosphere; and removing the ceramic coating from the surface of the metallic component by contacting the ceramic coatingmore »« less
Full Text Available

Similar Records