Method for removing semiconductor layers from salt substrates
Abstract
A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.
- Inventors:
-
- West Hartford, CT
- East Brookfield, MA
- Issue Date:
- Research Org.:
- Solar Energy Research Institute
- OSTI Identifier:
- 865565
- Patent Number(s):
- 4537651
- Application Number:
- 06/441,325
- Assignee:
- United Technologies Corporation (Hartford, CT)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- XS-0-9002-5
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; removing; semiconductor; layers; salt; substrates; described; cvd; layer; alkali; halide; substrate; following; deposition; semiconductor-substrate; combination; supported; material; tungsten; readily; wet; molten; temperature; raised; melting; melted; removed; capillary; action; wettable; support; melting temperature; semiconductor layer; molten alkali; capillary action; halide salt; semiconductor layers; substrate following; alkali halide; salt substrates; salt substrate; /117/156/
Citation Formats
Shuskus, Alexander J, and Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates. United States: N. p., 1985.
Web.
Shuskus, Alexander J, & Cowher, Melvyn E. Method for removing semiconductor layers from salt substrates. United States.
Shuskus, Alexander J, and Cowher, Melvyn E. Tue .
"Method for removing semiconductor layers from salt substrates". United States. https://www.osti.gov/servlets/purl/865565.
@article{osti_865565,
title = {Method for removing semiconductor layers from salt substrates},
author = {Shuskus, Alexander J and Cowher, Melvyn E},
abstractNote = {A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}
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