Title: Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

Abstract

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Inventors:

Moustakas, Theodore D ^[1]; Maruska, H Paul ^[1]

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+ Show Inventor Affiliations

1. Annandale, NJ

Issue Date:

1985-07-09

Research Org.:

Solar Energy Research Institute

OSTI Identifier:

865508

Patent Number(s):

4528082

Application Number:

06/535,901

Assignee:

Exxon Research and Engineering Co. (Florham Park, NJ)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02425 - {Conductive materials, e.g. metallic silicides}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02576 - {N-type}
H01L21/02579 - {P-type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/868 - PIN diodes
H01L31/03921 - {including only elements of Group IV of the Periodic System}
H01L31/075 - the potential barriers being only of the PIN type
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/548 - Amorphous silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:  

XZ-0-9219

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

method; sputtering; amorphous; silicon; semi-conductor; device; partially; crystallized; n-layers; efficiency; semiconductor; microcrystalline; layers; constructed; sequential; semi-transparent; ohmic; electrode; construction; produces; exhibiting; enhanced; electrical; optical; properties; improved; physical; integrity; facilitates; preparation; singular; vacuum; pump; procedure; amorphous silicon; semiconductor device; optical properties; vacuum pump; semi-conductor device; semi-transparent ohmic; ohmic electrode; enhanced electrical; improved physical; sequential sputtering; silicon semi-conductor; partially crystallized; exhibiting enhanced; transparent ohmic; efficiency amorphous; /204/136/257/