Thin films of mixed metal compounds

Title: Thin films of mixed metal compounds

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Abstract

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Inventors:

Mickelsen, Reid A ^[1]; Chen, Wen S ^[2]

Bellevue, WA
Seattle, WA

Issue Date:: 1985-01-01

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

OSTI Identifier:: 865480

Patent Number(s):: 4523051

Assignee:: Boeing Company (Seattle, WA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/022425 - {for solar cells}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/541 - CuInSe2 material PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0749 - including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
H01L31/0322 - {comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2}

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DOE Contract Number:: EG-77-C-01-4042

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: films; mixed; metal; compounds; compositionally; uniform; film; compound; formed; simultaneously; evaporating; independent; sources; mean; free; path; vapor; particles; reduced; gas; vapors; deposited; uniformly; particular; utility; forming; heterojunction; solar; cells; free path; mean free; heterojunction solar; metal compound; metal compounds; mixed metal; solar cell; solar cells; particular utility; junction solar; film heterojunction; mixed vapor; /136/427/438/

Citation Formats


                    Mickelsen, Reid A, and Chen, Wen S. Thin films of mixed metal compounds.  United States: N. p., 1985. 
        Web.

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                    Mickelsen, Reid A, & Chen, Wen S. Thin films of mixed metal compounds.  United States.

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                    Mickelsen, Reid A, and Chen, Wen S. Tue .  
        "Thin films of mixed metal compounds".  United States.  https://www.osti.gov/servlets/purl/865480.

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@article{osti_865480,

  title        = {Thin films of mixed metal compounds},

  author       = {Mickelsen, Reid A and Chen, Wen S},

  abstractNote = {A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {1}

}

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