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Title: Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.
Inventors:
 [1];  [1]
  1. (Annandale, NJ)
Issue Date:
OSTI Identifier:
865390
Assignee:
Exxon Research & Engineering Co. (Florham Park, NJ) OSTI
Patent Number(s):
US 4508609
Application Number:
06/535,902
Contract Number:
XZ092191
Country of Publication:
United States
Language:
English
Subject:
method; sputtering; microcrystalline; amorphous; silicon; semiconductor; device; n-layers; sputtered; boron; phosphorous; heavily; doped; targets; constructed; layers; layer; undoped; target; semi-transparent; ohmic; electrode; heavily doped; amorphous silicon; semiconductor device; semi-transparent ohmic; ohmic electrode; silicon semiconductor; transparent ohmic; /204/136/257/