skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: InP:Fe Photoconducting device

Abstract

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

Inventors:
 [1];  [2];  [1]
  1. Los Alamos, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
OSTI Identifier:
865298
Patent Number(s):
4490709
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
inp; photoconducting; device; fabricated; fe-doped; semi-insulating; crystals; exhibits; exponential; decay; transient; time; inversely; related; concentration; photoconductive; demonstrated; devices; auge; ausn; contacts; response; times; 150; 1000; picoseconds; achieved; response time; inversely related; response times; device fabricated; decay time; photoconducting device; /338/257/

Citation Formats

Hammond, Robert B, Paulter, Nicholas G, and Wagner, Ronald S. InP:Fe Photoconducting device. United States: N. p., 1984. Web.
Hammond, Robert B, Paulter, Nicholas G, & Wagner, Ronald S. InP:Fe Photoconducting device. United States.
Hammond, Robert B, Paulter, Nicholas G, and Wagner, Ronald S. Sun . "InP:Fe Photoconducting device". United States. https://www.osti.gov/servlets/purl/865298.
@article{osti_865298,
title = {InP:Fe Photoconducting device},
author = {Hammond, Robert B and Paulter, Nicholas G and Wagner, Ronald S},
abstractNote = {A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}

Patent:

Save / Share: