InP:Fe Photoconducting device

Hammond, Robert B; Paulter, Nicholas G; Wagner, Ronald S

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Title: InP:Fe Photoconducting device

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Abstract

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

Inventors:

Hammond, Robert B ^[1]; Paulter, Nicholas G ^[2]; Wagner, Ronald S ^[1]

Los Alamos, NM
Albuquerque, NM

Issue Date:: 1984-01-01

Research Org.:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

OSTI Identifier:: 865298

Patent Number(s):: 4490709

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0224 - Electrodes
H01L31/03042 - {characterised by the doping material}
H01L31/09 - Devices sensitive to infra-red, visible or ultraviolet radiation

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:: W-7405-ENG-36

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: inp; photoconducting; device; fabricated; fe-doped; semi-insulating; crystals; exhibits; exponential; decay; transient; time; inversely; related; concentration; photoconductive; demonstrated; devices; auge; ausn; contacts; response; times; 150; 1000; picoseconds; achieved; response time; inversely related; response times; device fabricated; decay time; photoconducting device; /338/257/

Citation Formats


                    Hammond, Robert B, Paulter, Nicholas G, and Wagner, Ronald S. InP:Fe Photoconducting device.  United States: N. p., 1984. 
        Web.

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                    Hammond, Robert B, Paulter, Nicholas G, & Wagner, Ronald S. InP:Fe Photoconducting device.  United States.

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                    Hammond, Robert B, Paulter, Nicholas G, and Wagner, Ronald S. Sun .  
        "InP:Fe Photoconducting device".  United States.  https://www.osti.gov/servlets/purl/865298.

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@article{osti_865298,

  title        = {InP:Fe Photoconducting device},

  author       = {Hammond, Robert B and Paulter, Nicholas G and Wagner, Ronald S},

  abstractNote = {A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {1}

}

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