High temperature bias line stabilized current sources
Abstract
A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.
- Inventors:
-
- (Melbourne, FL)
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 865160
- Patent Number(s):
- 4471236
- Assignee:
- Harris Corporation (Melbourne, FL)
- Patent Classifications (CPCs):
-
G - PHYSICS G05 - CONTROLLING G05F - SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03F - AMPLIFIERS
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- temperature; bias; line; stabilized; current; sources; compensation; device; base; emitter; follower; configured; bipolar; transistors; becoming; operable; elevated; temperatures; including; transistor; geometry; half; collector; connected; elevated temperatures; elevated temperature; current source; bipolar transistors; bipolar transistor; temperatures including; temperature bias; current sources; /327/323/
Citation Formats
Patterson, III, Raymond B. High temperature bias line stabilized current sources. United States: N. p., 1984.
Web.
Patterson, III, Raymond B. High temperature bias line stabilized current sources. United States.
Patterson, III, Raymond B. Sun .
"High temperature bias line stabilized current sources". United States. https://www.osti.gov/servlets/purl/865160.
@article{osti_865160,
title = {High temperature bias line stabilized current sources},
author = {Patterson, III, Raymond B.},
abstractNote = {A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1984},
month = {Sun Jan 01 00:00:00 EST 1984}
}
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