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Title: High temperature bias line stabilized current sources

Abstract

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.

Inventors:
 [1]
  1. (Melbourne, FL)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
865160
Patent Number(s):
4471236
Assignee:
Harris Corporation (Melbourne, FL) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
temperature; bias; line; stabilized; current; sources; compensation; device; base; emitter; follower; configured; bipolar; transistors; becoming; operable; elevated; temperatures; including; transistor; geometry; half; collector; connected; elevated temperatures; elevated temperature; current source; bipolar transistors; bipolar transistor; temperatures including; temperature bias; current sources; /327/323/

Citation Formats

Patterson, III, Raymond B. High temperature bias line stabilized current sources. United States: N. p., 1984. Web.
Patterson, III, Raymond B. High temperature bias line stabilized current sources. United States.
Patterson, III, Raymond B. Sun . "High temperature bias line stabilized current sources". United States. https://www.osti.gov/servlets/purl/865160.
@article{osti_865160,
title = {High temperature bias line stabilized current sources},
author = {Patterson, III, Raymond B.},
abstractNote = {A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}

Patent:

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