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Title: Method of deposition of silicon carbide layers on substrates and product

Abstract

A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.

Inventors:
 [1];  [2];  [1];  [1];  [2]
  1. (Oak Ridge, TN)
  2. (Knoxville, TN)
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
OSTI Identifier:
865089
Patent Number(s):
4459338
Assignee:
United States of America as represented by United States (Washington, DC) ORNL
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; deposition; silicon; carbide; layers; substrates; product; direct; chemical; vapor; especially; nuclear; waste; particles; provided; thermal; decomposition; methylsilane; 800; degree; 1050; confined; suitable; coating; environment; waste particles; thermal decomposition; chemical vapor; silicon carbide; vapor deposition; nuclear waste; direct chemical; carbide layers; /428/427/976/

Citation Formats

Angelini, Peter, DeVore, Charles E., Lackey, Walter J., Blanco, Raymond E., and Stinton, David P. Method of deposition of silicon carbide layers on substrates and product. United States: N. p., 1984. Web.
Angelini, Peter, DeVore, Charles E., Lackey, Walter J., Blanco, Raymond E., & Stinton, David P. Method of deposition of silicon carbide layers on substrates and product. United States.
Angelini, Peter, DeVore, Charles E., Lackey, Walter J., Blanco, Raymond E., and Stinton, David P. Sun . "Method of deposition of silicon carbide layers on substrates and product". United States. https://www.osti.gov/servlets/purl/865089.
@article{osti_865089,
title = {Method of deposition of silicon carbide layers on substrates and product},
author = {Angelini, Peter and DeVore, Charles E. and Lackey, Walter J. and Blanco, Raymond E. and Stinton, David P.},
abstractNote = {A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}

Patent:

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