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Title: Method of preparing silicon from sodium fluosilicate

Abstract

A process for preparing high purity silicon metal from Na.sub.2 SiF.sub.6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF.sub.4. The SiF.sub.4 is then reduced by the bomb reduction method using a reductant having a low packing density.

Inventors:
 [1];  [1];  [1]
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  1. Ames, IA
Issue Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
OSTI Identifier:
864983
Patent Number(s):
4446120
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
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DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; preparing; silicon; sodium; fluosilicate; process; purity; metal; na; sif; heated; decomposition; temperature; form; naf; retains; impurities; gaseous; reduced; bomb; reduction; reductant; packing; density; packing density; sodium fluosilicate; decomposition temperature; silicon metal; purity silicon; reduction method; preparing silicon; /423/

Citation Formats

Schmidt, Frederick A, Rehbein, David, and Chiotti, Premo. Method of preparing silicon from sodium fluosilicate. United States: N. p., 1984. Web.
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Schmidt, Frederick A, Rehbein, David, & Chiotti, Premo. Method of preparing silicon from sodium fluosilicate. United States.
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Schmidt, Frederick A, Rehbein, David, and Chiotti, Premo. Sun . "Method of preparing silicon from sodium fluosilicate". United States. https://www.osti.gov/servlets/purl/864983.
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@article{osti_864983,
title = {Method of preparing silicon from sodium fluosilicate},
author = {Schmidt, Frederick A and Rehbein, David and Chiotti, Premo},
abstractNote = {A process for preparing high purity silicon metal from Na.sub.2 SiF.sub.6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF.sub.4. The SiF.sub.4 is then reduced by the bomb reduction method using a reductant having a low packing density.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}
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