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Title: Thin film photovoltaic device with multilayer substrate

Abstract

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Inventors:
 [1];  [2]
  1. (Rushland, PA)
  2. (Wilmington, DE)
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
864966
Patent Number(s):
4443653
Assignee:
University of Delaware (Newark, DE) NREL
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; photovoltaic; device; multilayer; substrate; utilizes; compound; semiconductor; layer; chosen; iib; va; periodic; table; formed; lowermost; support; layers; additionally; uppermost; carbide; silicon; adjacent; below; metal; conductivity; expansion; coefficient; equal; slightly; expansion coefficient; silicon layer; metal layer; photovoltaic device; semiconductor layer; film photovoltaic; compound semiconductor; periodic table; support layer; multilayer substrate; /136/257/427/438/

Citation Formats

Catalano, Anthony W., and Bhushan, Manjul. Thin film photovoltaic device with multilayer substrate. United States: N. p., 1984. Web.
Catalano, Anthony W., & Bhushan, Manjul. Thin film photovoltaic device with multilayer substrate. United States.
Catalano, Anthony W., and Bhushan, Manjul. Sun . "Thin film photovoltaic device with multilayer substrate". United States. https://www.osti.gov/servlets/purl/864966.
@article{osti_864966,
title = {Thin film photovoltaic device with multilayer substrate},
author = {Catalano, Anthony W. and Bhushan, Manjul},
abstractNote = {A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}

Patent:

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