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Title: Process for obtaining silicon from fluosilicic acid

Abstract

Process for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (Na preferred) is carried out by jetting a spray of reactants into a reaction chamber at a rate and temperature which causes the reaction to take place far enough away from the entry region to avoid plugging of reactants at the entry region and wherein separation in the melt is carried out continuously from the reaction and the Si can be cast directly from the melt.

Inventors:
 [1]
  1. (San Jose, CA)
Issue Date:
OSTI Identifier:
864949
Patent Number(s):
4442082
Application Number:
06/453,456
Assignee:
SRI International (Menlo Park, CA) OSTI
DOE Contract Number:  
954471-NAS 7-100
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; obtaining; silicon; fluosilicic; acid; producing; cost; purity; solar; grade; reduction; reaction; preferably; sif; alkali; metal; na; preferred; carried; jetting; spray; reactants; chamber; rate; temperature; causes; entry; region; avoid; plugging; separation; melt; continuously; cast; directly; na preferred; fluosilicic acid; reaction chamber; alkali metal; solar grade; purity solar; entry region; obtaining silicon; reduction reaction; avoid plugging; cast directly; silicic acid; /423/422/

Citation Formats

Sanjurjo, Angel. Process for obtaining silicon from fluosilicic acid. United States: N. p., 1984. Web.
Sanjurjo, Angel. Process for obtaining silicon from fluosilicic acid. United States.
Sanjurjo, Angel. Tue . "Process for obtaining silicon from fluosilicic acid". United States. https://www.osti.gov/servlets/purl/864949.
@article{osti_864949,
title = {Process for obtaining silicon from fluosilicic acid},
author = {Sanjurjo, Angel},
abstractNote = {Process for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (Na preferred) is carried out by jetting a spray of reactants into a reaction chamber at a rate and temperature which causes the reaction to take place far enough away from the entry region to avoid plugging of reactants at the entry region and wherein separation in the melt is carried out continuously from the reaction and the Si can be cast directly from the melt.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {4}
}

Patent:

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