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Title: Method for forming indium oxide/n-silicon heterojunction solar cells

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.
Inventors:
 [1];  [2]
  1. (Morris Plains, NJ)
  2. (New Providence, NJ)
Issue Date:
OSTI Identifier:
864914
Assignee:
Exxon Research and Engineering Co. (Florham Park, NJ) OSTI
Patent Number(s):
US 4436765
Application Number:
06/422,668
Contract Number:
XJ-0-9077-1
Research Org:
Exxon Research and Engineering Company
Country of Publication:
United States
Language:
English
Subject:
method; forming; indium; oxide; n-silicon; heterojunction; solar; cells; photo-conversion; efficiency; cell; spray; deposited; solution; containing; trichloride; exhibits; air; mass; conversion; excess; 10; n-silicon heterojunction; air mass; heterojunction solar; indium oxide; conversion efficiency; solution containing; solar cell; solar cells; junction solar; spray deposited; cell exhibits; solar conversion; indium trichloride; photo-conversion efficiency; efficiency indium; containing indium; /438/136/427/