Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
Abstract
A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.
- Inventors:
-
- Gainesville, FL
- Issue Date:
- Research Org.:
- Solar Energy Research Institute
- OSTI Identifier:
- 864882
- Patent Number(s):
- 4431858
- Application Number:
- 06/377,558
- Assignee:
- University of Florida (Gainesville, FL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XS-9-8275-1
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; quasi-grain; boundary-free; polycrystalline; solar; cell; structure; obtained; provided; increase; efficiency; cells; suppressing; completely; eliminating; recombination; losses; due; presence; grain; boundaries; achieved; avoiding; formation; p-n; junction; types; junctions; active; basic; concept; applied; material; beneficial; cost-effective; materials; grains; including; film; film materials; losses due; cell structure; crystalline material; p-n junction; grain boundaries; solar cell; solar cells; polycrystalline material; film material; grain boundary; polycrystalline solar; /136/257/438/
Citation Formats
Gonzalez, Franklin N, and Neugroschel, Arnost. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby. United States: N. p., 1984.
Web.
Gonzalez, Franklin N, & Neugroschel, Arnost. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby. United States.
Gonzalez, Franklin N, and Neugroschel, Arnost. Tue .
"Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby". United States. https://www.osti.gov/servlets/purl/864882.
@article{osti_864882,
title = {Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby},
author = {Gonzalez, Franklin N and Neugroschel, Arnost},
abstractNote = {A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {2}
}