Method of making coherent multilayer crystals

Title: Method of making coherent multilayer crystals

Full Record
Other Related Research

Abstract

A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

Inventors:

Schuller, Ivan K. ^[1]; Falco, Charles M. ^[1]

(Woodridge, IL)

Issue Date:: 1984-01-01

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL

OSTI Identifier:: 864864

Patent Number(s):: 4430183

Assignee:: United States of America as represented by United States (Washington, DC) ANL

DOE Contract Number:: W-31109-ENG-38

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; coherent; multilayer; crystals; material; consisting; crystal; elements; layer; composed; single; element; vary; thickness; ang; 2500; prepared; sputter; deposition; conditions; slow; sputtered; atoms; near; substrate; temperatures; contact; material consisting; single element; sputter deposition; substrate temperature; multilayer crystals; substrate temperatures; coherent multilayer; rate temperature; sputtered atoms; sputter deposit; multilayer crystal; /204/117/505/

Citation Formats


                    Schuller, Ivan K., and Falco, Charles M. Method of making coherent multilayer crystals.  United States: N. p., 1984. 
        Web.

Copy to clipboard


                    Schuller, Ivan K., & Falco, Charles M. Method of making coherent multilayer crystals.  United States.

Copy to clipboard


                    Schuller, Ivan K., and Falco, Charles M. Sun .  
        "Method of making coherent multilayer crystals".  United States.  https://www.osti.gov/servlets/purl/864864.

Copy to clipboard


                    
@article{osti_864864,

  title        = {Method of making coherent multilayer crystals},

  author       = {Schuller, Ivan K. and Falco, Charles M.},

  abstractNote = {A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {1}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Coherent multilayer crystals and method of making

Patent Schuller, Ivan K. (Woodridge, IL); Falco, Charles M. (Tucson, AZ)

A new material consisting of a multilayer crystalline structure which is coherent perpendicular to the layers and where each layer is composed of a single crystalline element. The individual layers may vary from 2.ANG. to 100.ANG. or more in thickness.
Full Text Available
Multilayer capacitors, method for making multilayer capacitors

Patent Ma, Beihai; Balachandran, Uthamalingam

The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.
Full Text Available
Method of making coherent multilayer crystals

Patent Schuller, I.K.; Falco, C.M.

A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 A to 2500 A. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.
Coherent multilayer crystals and method of making

Patent Schuller, I.K.; Falco, C.M.

A new material consisting of a multilayer crystalline structure is described which is coherent perpendicular to the layers and where each layer is composed of a single crystallilne element. The individual layers may vary from 2A to 100A or more in thickness.
Coherent multilayer crystals and method of making

Patent Schuller, I.K.; Falco, C.M.

A new material is described consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 A to 2500 A. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

Similar Records