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Title: Method of making coherent multilayer crystals

Abstract

A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

Inventors:
 [1];  [1]
  1. (Woodridge, IL)
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
864864
Patent Number(s):
4430183
Assignee:
United States of America as represented by United States (Washington, DC) ANL
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; coherent; multilayer; crystals; material; consisting; crystal; elements; layer; composed; single; element; vary; thickness; ang; 2500; prepared; sputter; deposition; conditions; slow; sputtered; atoms; near; substrate; temperatures; contact; material consisting; single element; sputter deposition; substrate temperature; multilayer crystals; substrate temperatures; coherent multilayer; rate temperature; sputtered atoms; sputter deposit; multilayer crystal; /204/117/505/

Citation Formats

Schuller, Ivan K., and Falco, Charles M. Method of making coherent multilayer crystals. United States: N. p., 1984. Web.
Schuller, Ivan K., & Falco, Charles M. Method of making coherent multilayer crystals. United States.
Schuller, Ivan K., and Falco, Charles M. Sun . "Method of making coherent multilayer crystals". United States. https://www.osti.gov/servlets/purl/864864.
@article{osti_864864,
title = {Method of making coherent multilayer crystals},
author = {Schuller, Ivan K. and Falco, Charles M.},
abstractNote = {A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}

Patent:

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