Chemical vapor deposition of epitaxial silicon
Abstract
A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.
- Inventors:
-
- Florham Park, NJ
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- OSTI Identifier:
- 864863
- Patent Number(s):
- 4430149
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- chemical; vapor; deposition; epitaxial; silicon; single; chamber; continuous; cvd; reactor; described; depositing; continuously; flat; substrates; example; layers; semiconductor; materials; formed; separate; zones; baffles; tubes; carrying; source; material; carrier; gas; stream; hydrogen; interaction; wafers; heated; temperature; diffusion; streams; effects; intermediate; zone; cooled; final; coolant; gases; batch; processing; embodying; principles; coolant gas; single chamber; semiconductor materials; source material; hydrogen gas; chemical vapor; carrier gas; semiconductor material; gas stream; vapor deposition; gas streams; epitaxial layer; batch processing; batch process; separate zone; epitaxial deposition; final zone; epitaxial silicon; epitaxial layers; flat substrates; coolant gases; rate zones; continuous chemical; /117/118/427/438/
Citation Formats
Berkman, Samuel. Chemical vapor deposition of epitaxial silicon. United States: N. p., 1984.
Web.
Berkman, Samuel. Chemical vapor deposition of epitaxial silicon. United States.
Berkman, Samuel. Sun .
"Chemical vapor deposition of epitaxial silicon". United States. https://www.osti.gov/servlets/purl/864863.
@article{osti_864863,
title = {Chemical vapor deposition of epitaxial silicon},
author = {Berkman, Samuel},
abstractNote = {A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1984},
month = {Sun Jan 01 00:00:00 EST 1984}
}