Plastic Schottky barrier solar cells

Title: Plastic Schottky barrier solar cells

Full Record
Other Related Research

Abstract

A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

Inventors:

Waldrop, James R ^[1]; Cohen, Marshall J ^[1]

Thousand Oaks, CA

Issue Date:: 1984-01-24

Research Org.:: Univ. of Pennsylvania, Philadelphia, PA (United States)

OSTI Identifier:: 864851

Patent Number(s):: 4427840

Application Number:: 06/335,994

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/549 - organic PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L51/0041 - {Poly acetylene
H01L51/4206 - {Metal-organic semiconductor-metal devices}
H01L31/07 - the potential barriers being only of the Schottky type

Show less

DOE Contract Number:: AC04-79ET23002

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: plastic; schottky; barrier; solar; cells; photovoltaic; cell; structure; fabricated; active; medium; including; undoped; intrinsically; p-type; organic; semiconductor; comprising; polyacetylene; film; material; rectifying; contact; magnesium; electrode; schottky-barrier; junction; obtained; gold; overlayer; passivates; layer; barrier solar; cell structure; medium including; schottky barrier; solar cell; solar cells; photovoltaic cell; active medium; organic semiconductor; semiconductor comprising; /136/257/

Citation Formats


                    Waldrop, James R, and Cohen, Marshall J. Plastic Schottky barrier solar cells.  United States: N. p., 1984. 
        Web.

Copy to clipboard


                    Waldrop, James R, & Cohen, Marshall J. Plastic Schottky barrier solar cells.  United States.

Copy to clipboard


                    Waldrop, James R, and Cohen, Marshall J. Tue .  
        "Plastic Schottky barrier solar cells".  United States.  https://www.osti.gov/servlets/purl/864851.

Copy to clipboard


                    
@article{osti_864851,

  title        = {Plastic Schottky barrier solar cells},

  author       = {Waldrop, James R and Cohen, Marshall J},

  abstractNote = {A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {1}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Patent Carlson, David E [Yardley, PA]; Wronski, Christopher R [Princeton, NJ]

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase themore »« less
Full Text Available
Liquid junction schottky barrier solar cell

Patent Williams, Richard [Princeton, NJ]

A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.
Full Text Available
Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Patent Carlson, David E [Yardley, PA]

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.
Full Text Available
Dye-sensitized Schottky barrier solar cells

Patent Skotheim, Terje A [Berkeley, CA]

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substratemore »« less
Full Text Available
Plastic Schottky-barrier solar cells

Patent Waldrop, J R; Cohen, M J

A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

Similar Records