Sputtered pin amorphous silicon semi-conductor device and method therefor
Abstract
A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.
- Inventors:
-
- Berkeley Heights, NJ
- Milford, NJ
- Issue Date:
- Research Org.:
- Solar Energy Research Institute
- OSTI Identifier:
- 864793
- Patent Number(s):
- 4417092
- Application Number:
- 06/243,754
- Assignee:
- Exxon Research and Engineering Co. (Florham Park, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XZ-0-9219
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- sputtered; amorphous; silicon; semi-conductor; device; method; efficiency; constructed; sequential; sputtering; layers; semi-transparent; ohmic; electrode; construction; produces; exhibiting; enhanced; physical; integrity; facilitates; ease; singular; vacuum; pump; procedure; amorphous silicon; vacuum pump; semi-conductor device; semi-transparent ohmic; ohmic electrode; sequential sputtering; silicon semi-conductor; exhibiting enhanced; transparent ohmic; efficiency amorphous; /136/204/257/
Citation Formats
Moustakas, Theodore D, and Friedman, Robert A. Sputtered pin amorphous silicon semi-conductor device and method therefor. United States: N. p., 1983.
Web.
Moustakas, Theodore D, & Friedman, Robert A. Sputtered pin amorphous silicon semi-conductor device and method therefor. United States.
Moustakas, Theodore D, and Friedman, Robert A. Tue .
"Sputtered pin amorphous silicon semi-conductor device and method therefor". United States. https://www.osti.gov/servlets/purl/864793.
@article{osti_864793,
title = {Sputtered pin amorphous silicon semi-conductor device and method therefor},
author = {Moustakas, Theodore D and Friedman, Robert A},
abstractNote = {A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {11}
}