Hybrid method of making an amorphous silicon P-I-N semiconductor device
Abstract
The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.
- Inventors:
-
- Berkeley Heights, NJ
- Woodland Hills, CA
- Princeton, NJ
- Issue Date:
- OSTI Identifier:
- 864719
- Patent Number(s):
- 4407710
- Application Number:
- 06/311,546
- Assignee:
- Exxon Research and Engineering Co. (Florham Park, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XZ-0-9219
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- hybrid; method; amorphous; silicon; p-i-n; semiconductor; device; directed; hydrogenated; glow; discharge; reactive; sputtering; fabrication; advantage; providing; ability; control; optical; band; gap; layers; resulting; increased; photogeneration; charge; carriers; output; reactive sputtering; charge carrier; fabrication method; charge carriers; band gap; amorphous silicon; hydrogenated amorphous; glow discharge; semiconductor device; silicon p-i-n; optical band; /204/136/427/438/
Citation Formats
Moustakas, Theodore D, Morel, Don L, and Abeles, Benjamin. Hybrid method of making an amorphous silicon P-I-N semiconductor device. United States: N. p., 1983.
Web.
Moustakas, Theodore D, Morel, Don L, & Abeles, Benjamin. Hybrid method of making an amorphous silicon P-I-N semiconductor device. United States.
Moustakas, Theodore D, Morel, Don L, and Abeles, Benjamin. Tue .
"Hybrid method of making an amorphous silicon P-I-N semiconductor device". United States. https://www.osti.gov/servlets/purl/864719.
@article{osti_864719,
title = {Hybrid method of making an amorphous silicon P-I-N semiconductor device},
author = {Moustakas, Theodore D and Morel, Don L and Abeles, Benjamin},
abstractNote = {The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {10}
}
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