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Title: Hybrid method of making an amorphous silicon P-I-N semiconductor device

Abstract

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Inventors:
 [1];  [2];  [3]
  1. (Berkeley Heights, NJ)
  2. (Woodland Hills, CA)
  3. (Princeton, NJ)
Issue Date:
OSTI Identifier:
864719
Patent Number(s):
4407710
Application Number:
06/311,546
Assignee:
Exxon Research and Engineering Co. (Florham Park, NJ) OSTI
DOE Contract Number:  
XZ-0-9219
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
hybrid; method; amorphous; silicon; p-i-n; semiconductor; device; directed; hydrogenated; glow; discharge; reactive; sputtering; fabrication; advantage; providing; ability; control; optical; band; gap; layers; resulting; increased; photogeneration; charge; carriers; output; reactive sputtering; charge carrier; fabrication method; charge carriers; band gap; amorphous silicon; hydrogenated amorphous; glow discharge; semiconductor device; silicon p-i-n; optical band; /204/136/427/438/

Citation Formats

Moustakas, Theodore D., Morel, Don L., and Abeles, Benjamin. Hybrid method of making an amorphous silicon P-I-N semiconductor device. United States: N. p., 1983. Web.
Moustakas, Theodore D., Morel, Don L., & Abeles, Benjamin. Hybrid method of making an amorphous silicon P-I-N semiconductor device. United States.
Moustakas, Theodore D., Morel, Don L., and Abeles, Benjamin. Tue . "Hybrid method of making an amorphous silicon P-I-N semiconductor device". United States. https://www.osti.gov/servlets/purl/864719.
@article{osti_864719,
title = {Hybrid method of making an amorphous silicon P-I-N semiconductor device},
author = {Moustakas, Theodore D. and Morel, Don L. and Abeles, Benjamin},
abstractNote = {The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {10}
}

Patent:

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