Hybrid method of making an amorphous silicon P-I-N semiconductor device

Moustakas, Theodore D; Morel, Don L; Abeles, Benjamin

Title: Hybrid method of making an amorphous silicon P-I-N semiconductor device

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Abstract

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Inventors:

Moustakas, Theodore D ^[1]; Morel, Don L ^[2]; Abeles, Benjamin ^[3]

Berkeley Heights, NJ
Woodland Hills, CA
Princeton, NJ

Issue Date:: 1983-10-04

OSTI Identifier:: 864719

Patent Number(s):: 4407710

Application Number:: 06/311,546

Assignee:: Exxon Research and Engineering Co. (Florham Park, NJ)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/075 - the potential barriers being only of the PIN type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

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DOE Contract Number:: XZ-0-9219

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: hybrid; method; amorphous; silicon; p-i-n; semiconductor; device; directed; hydrogenated; glow; discharge; reactive; sputtering; fabrication; advantage; providing; ability; control; optical; band; gap; layers; resulting; increased; photogeneration; charge; carriers; output; reactive sputtering; charge carrier; fabrication method; charge carriers; band gap; amorphous silicon; hydrogenated amorphous; glow discharge; semiconductor device; silicon p-i-n; optical band; /204/136/427/438/

Citation Formats


                    Moustakas, Theodore D, Morel, Don L, and Abeles, Benjamin. Hybrid method of making an amorphous silicon P-I-N semiconductor device.  United States: N. p., 1983. 
        Web.

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                    Moustakas, Theodore D, Morel, Don L, & Abeles, Benjamin. Hybrid method of making an amorphous silicon P-I-N semiconductor device.  United States.

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                    Moustakas, Theodore D, Morel, Don L, and Abeles, Benjamin. Tue .  
        "Hybrid method of making an amorphous silicon P-I-N semiconductor device".  United States.  https://www.osti.gov/servlets/purl/864719.

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@article{osti_864719,

  title        = {Hybrid method of making an amorphous silicon P-I-N semiconductor device},

  author       = {Moustakas, Theodore D and Morel, Don L and Abeles, Benjamin},

  abstractNote = {The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1983},

  month        = {10}

}

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