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Title: Method of doping a semiconductor

Abstract

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Inventors:
 [1];  [2]
  1. (Miller Place, NY)
  2. (Columbus, OH)
Issue Date:
OSTI Identifier:
864617
Patent Number(s):
4392928
Assignee:
United States of America as represented by United States (Washington, DC) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; doping; semiconductor; material; interface; established; solid; electrolyte; doped; chosen; ionic; conductor; selected; impurity; jointly; compound; formed; free; energy; potential; allow; diffuse; embodiment; heated; increase; diffusion; coefficient; diffusion coefficient; free energy; semiconductor material; solid electrolyte; compound formed; compound form; doping semiconductor; /204/205/438/

Citation Formats

Yang, Chiang Y., and Rapp, Robert A. Method of doping a semiconductor. United States: N. p., 1983. Web.
Yang, Chiang Y., & Rapp, Robert A. Method of doping a semiconductor. United States.
Yang, Chiang Y., and Rapp, Robert A. Sat . "Method of doping a semiconductor". United States. https://www.osti.gov/servlets/purl/864617.
@article{osti_864617,
title = {Method of doping a semiconductor},
author = {Yang, Chiang Y. and Rapp, Robert A.},
abstractNote = {A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {1}
}

Patent:

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