Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds
Abstract
Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend tomore »
- Inventors:
-
- Bellevue, WA
- Seattle, WA
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- OSTI Identifier:
- 864614
- Patent Number(s):
- 4392451
- Assignee:
- Boeing Company (Seattle, WA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- apparatus; forming; thin-film; heterojunction; solar; cells; employing; materials; selected; i-iii-vi; chalcopyrite; compounds; relatively; light-to-electrical; energy; conversion; efficiency; characterized; cell; comprises; p-n-type; formed; semiconductor; layer; comprising; photovoltaic; active; material; ternary; vacuum; deposited; composition-graded; ranging; microns; congruent; region; preferably; resistivity; p-type; superimposed; transient; n-type; defining; p-n; homojunction; ii; interdiffusion; elemental; constituents; discrete; juxtaposed; regions; causes; evolve; device; absence; voids; vacancies; nodules; tend; reduce; transient p-n; photovoltaic active; p-n homojunction; n-type material; cells employing; material defining; materials selected; layer comprising; n-type semiconductor; heterojunction solar; cell comprises; conversion efficiency; active material; electrical energy; solar cell; semiconductor material; solar cells; semiconductor layer; energy conversion; preferably comprises; material selected; material preferably; transient n-type; p-type semiconductor; vacuum deposited; resistivity n-type; resistivity region; ternary materials; thin-film heterojunction; juxtaposed regions; light-to-electrical energy; junction solar; chalcopyrite ternary; film heterojunction; elemental constituents; superimposed region; forming thin-film; p-type material; layer ranging; layer defining; discrete juxtaposed; type heterojunction; homojunction layer; heterojunction formed; type material; type semiconductor; preferably comprise; junction device; /118/148/
Citation Formats
Mickelsen, Reid A, and Chen, Wen S. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds. United States: N. p., 1983.
Web.
Mickelsen, Reid A, & Chen, Wen S. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds. United States.
Mickelsen, Reid A, and Chen, Wen S. Sat .
"Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds". United States. https://www.osti.gov/servlets/purl/864614.
@article{osti_864614,
title = {Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds},
author = {Mickelsen, Reid A and Chen, Wen S},
abstractNote = {Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1983},
month = {Sat Jan 01 00:00:00 EST 1983}
}