Thin film heterojunction photovoltaic cells and methods of making the same

Basol, Bulent M; Tseng, Eric S; Rod, Robert L

Title: Thin film heterojunction photovoltaic cells and methods of making the same

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Abstract

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Inventors:

Basol, Bulent M ^[1]; Tseng, Eric S ^[1]; Rod, Robert L ^[1]

Los Angeles, CA

Issue Date:: 1983-06-14

OSTI Identifier:: 864581

Patent Number(s):: 4388483

Application Number:: 06/300,116

Assignee:: Monosolar, Inc. (Santa Monica, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02562 - {Tellurides}
H01L31/022425 - {for solar cells}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/03925 - {including AIIBVI compound materials, e.g. CdTe, CdS}
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}
H01L31/1832 - {comprising ternary compounds, e.g. Hg Cd Te}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: XS091521

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: film; heterojunction; photovoltaic; cells; methods; method; fabricating; cell; comprises; depositing; near; intrinsic; n-type; semiconductor; compound; formed; metal; elements; ii; periodic; table; tellurium; heating; temperature; 250; degree; 500; time; sufficient; convert; suitably; resistivity; p-type; deposited; initially; surface; substrate; alternatively; converted; layer; resulting; exhibits; substantially; increased; power; output; similar; subjected; metal elements; substantially increased; n-type semiconductor; semiconductor compound; metal element; photovoltaic cells; power output; semiconductor substrate; time sufficient; photovoltaic cell; periodic table; p-type semiconductor; comprises depositing; substantially increase; compound formed; film semiconductor; film heterojunction; increased power; heterojunction photovoltaic; cell exhibits; compound form; resulting ph; type semiconductor; similar cell; /136/205/257/438/

Citation Formats


                    Basol, Bulent M, Tseng, Eric S, and Rod, Robert L. Thin film heterojunction photovoltaic cells and methods of making the same.  United States: N. p., 1983. 
        Web.

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                    Basol, Bulent M, Tseng, Eric S, & Rod, Robert L. Thin film heterojunction photovoltaic cells and methods of making the same.  United States.

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                    Basol, Bulent M, Tseng, Eric S, and Rod, Robert L. Tue .  
        "Thin film heterojunction photovoltaic cells and methods of making the same".  United States.  https://www.osti.gov/servlets/purl/864581.

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@article{osti_864581,

  title        = {Thin film heterojunction photovoltaic cells and methods of making the same},

  author       = {Basol, Bulent M and Tseng, Eric S and Rod, Robert L},

  abstractNote = {A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1983},

  month        = {6}

}

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