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Title: High efficiency thin-film multiple-gap photovoltaic device

Abstract

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Inventors:
 [1]
  1. (Newark, DE)
Issue Date:
Research Org.:
UNIVERSITY OF DELAWARE
OSTI Identifier:
864523
Patent Number(s):
4377723
Assignee:
University of Delaware (Newark, DE) OSTI
DOE Contract Number:  
AC03-79ET23034
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
efficiency; thin-film; multiple-gap; photovoltaic; device; solar; cells; elements; alloys; amorphous; mounted; substrate; outermost; cell; larger; bandgap; various; techniques; utilized; improve; solar cell; solar cells; photovoltaic device; gap photovoltaic; /136/257/

Citation Formats

Dalal, Vikram L. High efficiency thin-film multiple-gap photovoltaic device. United States: N. p., 1983. Web.
Dalal, Vikram L. High efficiency thin-film multiple-gap photovoltaic device. United States.
Dalal, Vikram L. Sat . "High efficiency thin-film multiple-gap photovoltaic device". United States. https://www.osti.gov/servlets/purl/864523.
@article{osti_864523,
title = {High efficiency thin-film multiple-gap photovoltaic device},
author = {Dalal, Vikram L.},
abstractNote = {A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {1}
}

Patent:

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